2008
DOI: 10.1109/tsm.2008.2004323
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Fast Characterization of Threshold Voltage Fluctuation in MOS Devices

Abstract: Random microscopic fluctuations in the number and location of dopant atoms can cause a large variation in the threshold voltage ( ) of a MOS device. In this paper, we present a technique for fast characterization of random threshold voltage mismatch in MOS devices. Our scatter characterization method measures threshold voltage shift by monitoring the change in gate-to-source voltage for a fixed drain current and drain-to-source voltage . We present circuit schematics to characterize scatter by measuring variat… Show more

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Cited by 44 publications
(15 citation statements)
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“…In this configuration, M 1S and M 2S are part of the DC calibration loop that detects a mismatch between currents I 1 and I 2 , and generates bias voltages V B1 and V B2 individually for each branch. In the absence of mismatches, the gate-source voltage overdrives and drain currents of M 1S and M 2S must be equal [1], which only occurs when Fig. 3.…”
Section: Mismatch Reduction Methodsmentioning
confidence: 99%
See 2 more Smart Citations
“…In this configuration, M 1S and M 2S are part of the DC calibration loop that detects a mismatch between currents I 1 and I 2 , and generates bias voltages V B1 and V B2 individually for each branch. In the absence of mismatches, the gate-source voltage overdrives and drain currents of M 1S and M 2S must be equal [1], which only occurs when Fig. 3.…”
Section: Mismatch Reduction Methodsmentioning
confidence: 99%
“…Since the calibration loop has low-pass filtering nodes, the differential signal integrity is not jeopardized by coupling between M 1 The accuracy of the proposed method relies on the matching between M 1 /M 1S and M 2 /M 2S , which depends on their number of subdevices [5,18]. Let r DVth be the standard deviation of the threshold voltage difference for an unmatched transistor pair.…”
Section: Mismatch Reduction Methodsmentioning
confidence: 99%
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“…Local mismatch is simulated by considering device variations. Voltage threshold of the transistors is modeled as a Gaussian random variable with μ and σ characterized for the process, which is an appropriate assumption for the technology [8].…”
Section: Clock Skew: Probabilistic Approachmentioning
confidence: 99%
“…Integrating circuit monitors with high frequency analog circuits is one strategy that is proposed to increase yield, optimize system performances and reduce the cost of test [1][2][3]: it is well known that device parameters differ from their nominal value due to environmental changes (supply voltage, temperature), manufacturing process variation and intra-die variability, which trend to increase as technology scales down [4]. Moreover, due to the trend toward device shrinking, the complexity, density and operating frequency of both analog and RF integrated circuits (ICs) increase continuously.…”
Section: Introductionmentioning
confidence: 99%