Fast preparation of (111)‐oriented β‐SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H₂

Abstract

111)-oriented b-SiC films were prepared by laser chemical vapor deposition using a diode laser (wavelength: 808 nm) from a single liquid precursor of hexamethyldisilane (Si(CH 3 ) 3 -Si(CH 3 ) 3 , HMDS) without H 2 . The effects of laser power (P L ), total pressure (P tot ) and deposition temperature (T dep ) on the microstructure, carbon formation and deposition rate (R dep ) were investigated. b-SiC films with carbon formation and graphite films were prepared at P L ≥ 170 W and P to ≥ 1000 Pa, respectively. Carbon formation strongly inhibited the film growth. b-SiC films without carbon formation were obtained at P tot = 400-800 Pa and P L = 130-170 W. The maximum R dep was about 50 lmÁh À1 at P L = 170 W, P tot = 600 Pa and T dep = 1510 K. The investigation of growth mechanism shows that the photolytic of laser played an important role during the depositions. K E Y W O R D S chemical vapor deposition, films, silicon carbide Correspondence

Morphology controlling of 〈111〉-3C–SiC films by HMDS flow rate in LCVD

“…Two sets of {111} reection peaks of intrinsic epitaxial domains and double position domains (DPDs), respectively, are identied in the b-scan pattern of the 3C-SiC lm deposited at f ¼ 1 sccm, indicating that the 3C-SiC lm is epitaxial. The intrinsic epitaxial domains and Si substrate has the epitaxial relationship of SiC [1-10]//Si [1][2][3][4][5][6][7][8][9][10] and SiC [111]//Si [111]. DPDs rotate around a 180 -h111i axis compared to intrinsic epitaxial domains.…”

“…Hexamethyldisilane (HMDS, Si(CH 3 ) 3 -Si(CH 3 ) 3 ) has been employed in low pressure CVD (LPCVD) as a non-explosive and non-corrosive precursor; however, the resulting deposition rates of 3C-SiC lms were only several mm h À1 or less. 2 The laser chemical vapour deposition (LCVD) method developed by our group was employed to prepare 3C-SiC lms with a high deposition rate and high quality using HMDS as precursor. 1,3,4 The properties of the catalysis, sensing applications and eld emission are highly dependent on the surface morphology of lms.…”

Surface-Controlled Chemical Vapor Deposition of Silicon Carbide

“…Multicomponent precursors, e.g. methyltrichlorosilane [44][45][46][47][48][49][50][51][52][53][54] , hexamethyldisilane [55][56][57][58][59][60][61] , 1,3-disilabutane 62 , tetramethylsilane 63 , can function as a source for both Si and C atoms. On the other hand, single component precursors can only supply either Si or C atoms, and therefore a combination of Si-and Cprecursor is required.…”

Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC

“…Similarly, with C 3 H 8 as carbon precursor, the growth at T = 1200 °C, p tot = 4 kPa, was highly ⟨111⟩-oriented but switched to ⟨110⟩ at elevated temperatures. , No explanation for these changes in preferred growth orientation was suggested in these studies. Highly ⟨111⟩-oriented 3C-SiC has also been prepared with hexamethyldisilane via laser CVD. − However, because of the small laser spot size, the coating area was limited to less than 20 × 20 mm 2 .…”