FDSOI-based 1T Pixel Sensor with Long-term Data Retention for in-situ Convolution Computing

Yang, Haozhang; Zhou, Zheng; Yu, Guihai; Chen, Ruiqi; Han, Lixia; Huang, Peng; Liu, Xiaoyan; Kang, Jinfeng

doi:10.23919/snw57900.2023.10183921

Cited by 2 publications

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“…During exposure, the light goes through the thin BOX and is converted to electrons in the depletion region. 33) The collection of photoelectrons under the BOX induces backgate modulation by modifying the potential in the underlying region, which will cause a V TH shift of the nMOSFET, resulting in the I DS change as a readout signal. We fabricate the 1 T pixel structure using 22 nm FDSOI technology 34) as shown in the transmission electron microscopy (TEM) image in Fig.…”

Section: Fdsoi-based 1 T Pixel Architecturementioning

confidence: 99%

Gate-controlled gain tuning of fully depleted silicon-on-insulator-based 1 T pixel for in-sensor white balance

Li,

Zhou,

et al. 2024

Jpn. J. Appl. Phys.

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White balance (WB) is a critical back-end processing function in image sensor to keep color constancy under various lighting conditions by adjusting RGB color channel gain values. In this work, we proposed a novel gate-controlled gain tuning method for Fully-Depleted Silicon-on-Insulator (FDSOI) one-transistor (1T) pixel to achieve WB inside sensor. Based on the pixel structure of p-well under BOX for sensing and nMOSFET on the top for readout, the 1T pixel output gain is modulated by MOSFET gate according to transistor transfer characteristic. About 5x gain modulation range in RGB spectrums photoresponse (nonlinearity<3%) is experimentally demonstrated in the devices fabricated by 22nm FDSOI-based technology. The scheme for in-sensor WB demonstration is provided with a novel 1T pixel array design, and the evaluation result shows in-sensor WB achieving almost equivalent performance (Delta-E deviation<1) compared with using conventional back-end WB.

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Section: Fdsoi-based 1 T Pixel Architecturementioning

confidence: 99%