Feasibility study of 70nm pitch Cu/porous low-k D/D integration featuring EUV lithography toward 22nm generation

Nakamura, Norimasa; Oda, Noriaki; Soda, E.; Hosoi, N.; Gawase, A.; Aoyama, Hajime; Tanaka, Yuusuke; Kawamura, Daisuke; Chikaki, Shinichi; Shiohara, Morio; Tarumi, Nobuaki; Kondo, Seiichi; Mori, Ikue; Saito, Shuichi

doi:10.1109/iedm.2009.5424271

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…One of the choices is the ruthenium (Ru) film because of its low electrical resistivity of 7.6 µΩ cm (at 273 K) and excellent compatibility with Cu electroplating, since Cu direct plating is thought to be possible without fabricating a seed Cu layer by PVD. [52][53][54][55][56][57][58][59] However, Ru is an inert metal and difficult to remove by chemical reaction using conventional CMP slurries. Moreover, the PVD target is very costly.…”

Section: Galvanic Corrosionmentioning

confidence: 99%

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Electrochemical study on metal corrosion in chemical mechanical planarization process

Kondo

Ichige

Otsuka

2017

Jpn. J. Appl. Phys.

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Typical metal corrosions caused by the chemical mechanical planarization (CMP) process are discussed in this review paper. By categorizing them into seven kinds of corrosion, namely, chemical corrosion, crevice corrosion, crystal-orientation-dependent corrosion, narrow trench corrosion, photocorrosion, galvanic corrosion, and electrostatic-charge induced corrosion, we discuss their mechanisms and how to suppress them on the basis of electrochemical studies. Moreover, we demonstrate the usefulness of three-dimensional pH–potential diagrams for predicting corrosion issues in an actual CMP process.

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Section: Galvanic Corrosionmentioning

confidence: 99%

“…44,59) As a result, it has not been used in mass production yet even after more than ten years of its development worldwide. [52][53][54][55][56][57][58][59]…”

Section: Galvanic Corrosionmentioning

confidence: 99%

Electrochemical study on metal corrosion in chemical mechanical planarization process

Kondo

Ichige

Otsuka

2017

Jpn. J. Appl. Phys.

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“…Among them, EUVL has achieved great progress in recent years, and several full-field EUVL technologies have been demonstrated [2], [3].…”

Section: Introductionmentioning

confidence: 99%

Effects of EUV Irradiation on Poly-Si SONOS NVM Devices

Tsui

Yen

et al. 2011

IEEE Electron Device Lett.

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The effects of extreme-ultraviolet (EUV)-irradiationinduced damage on the characteristics of a silicon-oxide-nitrideoxide-silicon (SONOS) memory device are investigated. After EUV irradiation, changes in the memory window and program/ erase speed indicate the generation of positive charges and new traps. Retention performance degrades after high-dose irradiation, which indicates that the tunneling layer is damaged. Endurance performance degrades severely because the damage in the blocking oxide results in serious electron back injection after cycling operations. These defects cannot be recovered after 600 • C annealing. It is recommended that in-process high-dose EUV irradiation on a SONOS stack after a front-end-of-line process should be avoided.Index Terms-Extreme ultraviolet lithography (EUVL), nonvolatile memory (NVM), radiation damage, silicon-oxide-nitrideoxide-silicon (SONOS) memory.

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“…The earlier works of this study has been presented at IEDM 2009. 21) This paper is a complete version added some new data concerning failure analysis of via-chain and showing the way to boost wiring yield. The design parameters, such as wiring capacitance, wiring resistance and via resistance were also evaluated.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

Nakamura¹,

Oda²,

Soda³

et al. 2011

Jpn. J. Appl. Phys.

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We investigate the emissions of atomic potassium excited by two photons near the 4S 1/2 -6S 1/2 transition. Radiation near the 6S 1/2 -4P 3/2,1/2 and 4P 3/2,1/2 -4S 1/2 transitions are studied for the unidirectional and the bidirectional cases, respectively. It is shown that the total output intensity increases considerably for the bidirectional propagation. This is attributed to the effective increase of the Doppler free excitation and the cancellation of the quantum interference effect that is associated with the multiple paths of excitation of certain states.

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Feasibility study of 70nm pitch Cu/porous low-k D/D integration featuring EUV lithography toward 22nm generation

Cited by 6 publications

References 6 publications

Electrochemical study on metal corrosion in chemical mechanical planarization process

Electrochemical study on metal corrosion in chemical mechanical planarization process

Effects of EUV Irradiation on Poly-Si SONOS NVM Devices

Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

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