Feasibility study of a novel molecular-pore-stacking (MPS), SiOCH film in fully-scale-down, 45nm-node Cu damascene interconnects

Tada, Munehiro; Ohtake, Hiroto; Narihiro, M.; Ito, Fuminori; Taiji, T.; Tohara, Makoto; Motoyama, K.; Kasama, Y.; Tagami, M.; Abe, Mari; Takeuchi, T.; Arai, Ken‐ichi; Saito, Shinichi; Furutake, N.; Onodera, Tsunenobu; Kawahara, J.; Kinoshita, Keizo; Hata, Nobuhiro; Kikkawa, Takamaro; Tsuchiya, Yumi; Fujii, Ken; Oda, Noriaki; Sekine, Makoto; Hayashi, Y.

doi:10.1109/.2005.1469195

Cited by 5 publications

(4 citation statements)

References 1 publication

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“…8,9) A molecularpore-stacked (MPS) SiOCH film has been developed by a plasma polymerization technique using a 6-membered Si-O ring (Si 3 O 3 ) ring-type siloxane as a precursor. 10,17) The feasibility of MPS-SiOCH for IMDs has been confirmed in 140 nm-pitch Cu interconnects. 11) It is found that (1) the inner molecular pore surrounded by silica atoms and (2) the C-rich chemistry with hydrocarbon side chains are key features of MPS-SiOCH for conducting at a low dielectric constant with the suppression of plasma damage at trench side walls particularly by oxygen plasma ashing.…”

Section: Introductionmentioning

confidence: 94%

Porous Low-k Impacts on Performance of Advanced LSI Devices with GHz Operations

Tada

Inoue

Kawahara

et al. 2009

jjap

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The impact of porous low-k films on circuit performance in GHz operation was investigated using high-speed circuits in 65 nm complementary metal oxide semiconductor (CMOS) LSI with 11-layered Cu dual damascene interconnects (DDIs). By introducing new non-porogen-type porous films, such as molecular-pore-stacking (MPS) SiOCH films, local low-k /Cu structures (M2-M5) with effective dielectric constants (K eff ) of 3.1 and 2.9 were fabricated, and their circuit performances were compared to those with conventional local interconnects with K eff ¼ 3:4. The interline capacitance (C int ), measured using an LCR meter at 100 kHz, was reduced by 12% from K eff ¼ 3:4 to 2.9. NAND-type ring oscillators (ROSCs), which were designed to have 1:5 GHz oscillation, also achieved 12 and 10% reductions in signal delay and power consumption, respectively. A 2 GHz static random access memory (SRAM) with K eff ¼ 2:9 provides a 4% reduction in bit-line capacitance (M2), resulting in a 6% decrease in V ddmin , or eventually widening the SRAM operation margin. The porous low-k impact on GHz operation is demonstrated for the first time.

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Section: Introductionmentioning

confidence: 94%

Porous Low-k Impacts on Performance of Advanced LSI Devices with GHz Operations

Tada

Inoue

Kawahara

et al. 2009

jjap

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“…Many attempts have been made to deal with this "low-k damage" problem. For example, robust low-k dielectrics, [12][13][14] such as nano-clustering silica, which utilizes an innovative concept for simultaneously achieving a lower dielectrics constant and mechanical strength, 12) recovery processes using supercritical carbon dioxide, 10) pore-sealing processes, [15][16][17][18][19] and so on. 20) Also, many recovery processes using silylation are reported using various kinds of silylation materials.…”

Section: Introductionmentioning

confidence: 99%

Systematic investigation of silylation materials for recovery use of low-kmaterial plasma damage

Imada

Nakata

Ozaki

et al. 2015

Jpn. J. Appl. Phys.

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We systematically investigated the recovery ability of some silylation materials for a plasma-damaged porous silica low-k material. In order to evaluate recovery ability, the permittivity and leakage current were measured. The recovery ability is listed in ascending order as ethoxy group, disilazane group, and dimethylamino group, and materials with SiH-(CH 3 ) 2 showed a better recovery ability than those with Si-(CH 3 ) 3 . Recovery mechanisms were also analyzed using Fourier transform infrared spectroscopy (FT-IR) and thermal desorption spectrometer (TDS). Clear differences in the silylation abilities were observed in the silylation rate as well as the amount of silylation. We focused on trimethylsilyldimethylamine (TMSDMA) and tetramethyldisilazane (TMDS) as the recovery material of vapor phase and both materials showed good recovery characteristics. TMSDMA showed rapid recovery because of its higher vapor pressure. TMDS effectively reduced the amount of absorbed water.

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“…An interconnect structure using molecular-pore stacking (MPS; k ¼ 2:53) is one of the best candidates to meet the demand. [3][4][5][6][7][8][9][10][11][12][13][14][15] Its properties are listed in Table I, [3][4][5][6][7][8][9] and the feature of the precursor and deposition scheme are shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

“…For problem (3), chemical wet cleaning using a fluorinebased chemical has been investigated for postetching cleaning. 4) However, this wet cleaning has a disadvantage in that the dielectric constant increases owing to chemical damage for low-k materials. Additionally, it is a concern that the critical dimension (CD) loss after wet cleaning increases as a result of chemical reaction with fluorine.…”

Section: Introductionmentioning

confidence: 99%

Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

Oshida¹,

Kume²,

Katsuyama³

et al. 2011

Jpn. J. Appl. Phys.

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We study the level spacing distribution p(s) in the spectrum of random networks. According to our numerical results, the shape of p(s) in the Erdős-Rényi (E-R) random graph is determined by the average degree k and p(s) undergoes a dramatic change when k is varied around the critical point of the percolation transition, k = 1. When k 1, the p(s) is described by the statistics of the Gaussian orthogonal ensemble (GOE), one of the major statistical ensembles in Random Matrix Theory, whereas at k = 1 it follows the Poisson level spacing distribution. Closely above the critical point, p(s) can be described in terms of an intermediate distribution between Poisson and the GOE, the Brodydistribution. Furthermore, below the critical point p(s) can be given with the help of the regularized Gamma-function. Motivated by these results, we analyse the behaviour of p(s) in real networks such as the internet, a word association network and a protein-protein interaction network as well. When the giant component of these networks is destroyed in a node deletion process simulating the networks subjected to intentional attack, their level spacing distribution undergoes a similar transition to that of the E-R graph.

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Feasibility study of a novel molecular-pore-stacking (MPS), SiOCH film in fully-scale-down, 45nm-node Cu damascene interconnects

Cited by 5 publications

References 1 publication

Porous Low-k Impacts on Performance of Advanced LSI Devices with GHz Operations

Porous Low-k Impacts on Performance of Advanced LSI Devices with GHz Operations

Systematic investigation of silylation materials for recovery use of low-kmaterial plasma damage

Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

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