Features of the conductivity of the quasi-one-dimensional compound TiS3

Gorlova, I. G.; Pokrovskiǐ, V. Ya.; Зыбцев, С. Г.; Titov, A. N.; Тимофеев, В. Н.

doi:10.1134/s1063776110080248

Cited by 38 publications

(53 citation statements)

References 13 publications

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“…Threshold nonlinearity typical of CDW depinning was also reported in papers [89,90]. More detailed studies demonstrated the nonlinear behavior of R d I dependence at low currents as well.…”

Section: Nonlinear Conduction In the Quasi-one-dimensional Conductor supporting

confidence: 65%

“…In all likelihood, the observed dependences are related to the quasione-dimensional character of conduction in combination with electron localization, rather than to the transition to onedimensional conduction [32]. This reasoning seems especially rational for TiS 3 , which shows neither high anisotropy of conduction nor a one-dimensional crystalline structure (crystal lattice parameters are as follows: a 0X50 nm, b 0X34 nm, and c 0X88 nm) [90]. The form of a threshold-free nonlinear CVC in the above cases is determined by the spatially nonuniform potential for carrier motion.…”

Section: Nonlinear Conduction In the Quasi-one-dimensional Conductor mentioning

confidence: 90%

“…At the same time, nonlinear conduction has recently been reported to occur in TiS 3 at a temperature below 60 K and to increase as temperature continues to drop. Resistance R d decreased by more than one order of magnitude at T % 4X2 K in an electric field of $ 30 V cm À1 [80,90].…”

Section: Nonlinear Conduction In the Quasi-one-dimensional Conductor mentioning

confidence: 97%

“…Based on CVC measurements along the chains, the authors of Refs [89,90] argue in favor of a collective mechanism of nonlinear conduction in TiS 3 samples. The dependences RT have peculiarities at 120, 59, and 17 K in the form of the maxima of jd ln RadT j derivatives in a and b directions, suggesting phase transitions to the condensed state, probably with the induction of a CDW.…”

Section: Nonlinear Conduction In the Quasi-one-dimensional Conductor mentioning

confidence: 99%

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High-frequency, 'quantum' and electromechanical effects in quasi-one-dimensional charge density wave conductors

Pokrovskiǐ¹,

Зыбцев²,

Nikitin³

et al. 2013

Usp. Fiz. Nauk

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Recent results (some previously unpublished) on the physics of charge density waves (CDWs) are reviewed. The synthesis conditions and unique properties of the quasi-onedimensional compound x Q , with highly coherent room temperature CDWs, are described. A peculiar type of`quantization' is discussed, which is observed in micro-and nanosamples of K 0X3 MoO 3 and NbSe 3 due to the discrete nature of CDW wave vector values. The electric-field-induced torsional strain (TS) in quasi-one-dimensional conductors is considered. Research results on the TS of a noise character induced by sliding CDWs are presented, along with those on the inverse effect, the modulation of the voltage induced by externally driven TS. Results on the nonlinear conduction of TiS 3 , a quasi-one-dimensional compound not belonging to the family of classical Peierls conductors, are also described. Contents 4.1 Nature of the deformation of quasi-one-dimensional conductors in an electric field; 4.2 Methods of torsion studies; 4.3 Main results of torsion studies; 4.4 Torsional effects associated with the sliding of a charge density wave; 4.5 Sample vibrations during the flow of a direct charge density wave current; 4.6 Nature of torsion; 4.7 Voltage modulation induced by torsional strain 5. Nonlinear conduction in the quasi-one-dimensional conductor TiS 3 45 6. Conclusions 46 References 47 30 V Ya Pokrovskii, S G Zybtsev, M V Nikitin, I G Gorlova, V F Nasretdinova, S V Zaitsev-Zotov Physics ± Uspekhi 56 (1) January 2013High-frequency,`quantum' and electromechanical effects in quasi-one-dimensional charge density wave conductors 31

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“…Threshold nonlinearity typical of CDW depinning was also reported in papers [89,90]. More detailed studies demonstrated the nonlinear behavior of R d I dependence at low currents as well.…”

Section: Nonlinear Conduction In the Quasi-one-dimensional Conductor supporting

confidence: 65%

Section: Nonlinear Conduction In the Quasi-one-dimensional Conductor mentioning

confidence: 90%

Section: Nonlinear Conduction In the Quasi-one-dimensional Conductor mentioning

confidence: 97%

Section: Nonlinear Conduction In the Quasi-one-dimensional Conductor mentioning

confidence: 99%

See 2 more Smart Citations

High-frequency, 'quantum' and electromechanical effects in quasi-one-dimensional charge density wave conductors

Pokrovskiǐ¹,

Зыбцев²,

Nikitin³

et al. 2013

Usp. Fiz. Nauk

View full text Add to dashboard Cite

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“…120,121,124,125,[137][138][139] These whiskers typically had thicknesses of a few to several micrometres. Contact was made by gold filled epoxy or by mechanically depressing indium contacts onto individual whiskers.…”

Section: Isolation and Exfoliation Of Mx3 Crystalsmentioning

confidence: 99%

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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TiS₃ Transistors with Tailored Morphology and Electrical Properties

et al. 2015

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Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.

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Features of the conductivity of the quasi-one-dimensional compound TiS3

Cited by 38 publications

References 13 publications

High-frequency, 'quantum' and electromechanical effects in quasi-one-dimensional charge density wave conductors

High-frequency, 'quantum' and electromechanical effects in quasi-one-dimensional charge density wave conductors

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

TiS₃ Transistors with Tailored Morphology and Electrical Properties

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Features of the conductivity of the quasi-one-dimensional compound TiS3

Cited by 38 publications

References 13 publications

High-frequency, 'quantum' and electromechanical effects in quasi-one-dimensional charge density wave conductors

High-frequency, 'quantum' and electromechanical effects in quasi-one-dimensional charge density wave conductors

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

TiS3 Transistors with Tailored Morphology and Electrical Properties

Contact Info

Product

Resources

About

TiS₃ Transistors with Tailored Morphology and Electrical Properties