FeFET Memory Featuring Large Memory Window and Robust Endurance of Long-Pulse Cycling by Interface Engineering using High-k AlON

Chan, Chi-Yu; Chen, Kuen-Yi; Peng, Hao‐Kai; Wu, Yung-Hsien

doi:10.1109/vlsitechnology18217.2020.9265103

Cited by 51 publications

(19 citation statements)

References 8 publications

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“…Furthermore, the high k value of the AlON IL [shown in Fig. 1(b)] allows a high voltage drop across the ferroelectric layer [22], which reduces V G consumption in the IL. The aforementioned phenomena cause a high voltage drop across the ferroelectric layer, which enables rapid switching.…”

Section: Resultsmentioning

confidence: 99%

High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

Yan

Lan

Sun

et al. 2021

IEEE Electron Device Lett.

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We fabricated the HfZrO 2 (HZO) ferroelectric fin field-effect transistors (Fe-FinFET) with fin width of 60 nm and gate length of 100 nm for ferroelectric nonvolatile memory operations. The fabricated Fe-FinFET exhibited a large memory window (MW) of 1.5 V and high (100 ns) program/erase speeds at ±5 V. After 10 5 program/erase cycles, the MW was maintained at 1.09 V and the retention time was measured up to 10 4 s with no degradation. The fabricated HZO Fe-FinFET is compatible with the current FinFET process and has a high MW, a fast program/erase speed, and excellent reliability. Therefore, the fabricated Fe-FinFET is a promising candidate for high-density ferroelectric field-effect transistor memory applications.

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Section: Resultsmentioning

confidence: 99%

High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

Yan

Lan

Sun

et al. 2021

IEEE Electron Device Lett.

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“…In contrast, for an FeCAP with metal/ferroelectric/semiconductor (MFS) structure, factors (a) and (b) cannot be ignored and play a critical role in determining the endurance performance. Based on the aforementioned arguments, the FeCAPs with the MFM structure typically demonstrate endurance up to 10 5 –10 8 cycles, − while the endurance performance is limited to 10 4 –10 6 cycles for the FeCAPs with the MFS structure. − For the FeCAPs studied in this work, the MFS structure is employed and therefore the endurance of 10 5 cycles is quite reasonable and comparable with those reported in the literature. Furthermore, the number of cycles in the endurance test also depends on the pulse width used for the cycling test.…”

Section: Resultsmentioning

confidence: 83%

Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Peng

Huang

Chou

et al. 2021

ACS Appl. Mater. Interfaces

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Epitaxial GeSn (epi-GeSn) shows the capability to form ferroelectric capacitors (FeCAPs) with a higher remanent polarization (P r) than epi-Ge. With the interface engineering by a high-k AlON, the reliability of the epi-GeSn-based FeCAPs is enhanced. Using the highly reliable FeCAP in series with a resistor as the synapse and axon, a simplified neuromorphic network based on a differentiator circuit is proposed. The network not only holds the leaky integrate-and-fire (LIF) function but is also capable of recognizing the spatiotemporal features, which sets it apart from other LIF neurons arising from the FeCAP-modulated leaky behavior of the potential on the axon by spiking-time-dependent plasticity. Furthermore, it is more energy efficient to operate, nondestructive to read, and simpler to fabricate by employing FeCAPs, making it eligible for emergent spiking neural network hardware accelerators.

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“…(b) A larger voltage drop across the HZO for the p-FeFET with the high-k AlON IL than that with the SiO 2 IL due to the k value difference of the IL. (c) Lower electron trapping for the n-FeFET with the high-k AlON IL than that with the SiO 2 IL due to enhanced interfacial quality that makes fewer amount of oxygen vacancies (Vo) in HZO [3] close to the conduction band minimum [15]. Note that device variability may present for the highly scaled FeFET due to a smaller number of ferroelectric domains.…”

Section: Results and Discussion A Memory Window For N-and P-fefetsmentioning

confidence: 99%

“…Typically wake-up effect is ascribed to redistribution of Vo due to high oxygen mobility and then the built-in field (E bi ) gradually decreases. Since the AlON IL is capable to suppress Vo in the HZO [3], the devices free from wake-up effect is expected. During the endurance test for PGS, the electrons inject from substrate under a positive voltage and back tunnel from HZO under negative voltage [22].…”

Section: B Reliability Performance For N-and P-fefetsmentioning

confidence: 99%

Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer

Peng

Kao

et al. 2021

IEEE Electron Device Lett.

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The Si-based n-and p-FeFET with 5-nm ferroelectric (FE) HfZrO x (HZO) and high-k AlON interfacial layer (IL) were fabricated for the comparison of memory characteristics and reliability. The memory window (MW) of 1.37 V and 1.25 V are obtained by the n-and p-FeFET respectively by applying pulses of ±3.8 V/50 µ s. The typical MW asymmetry for both types of FeFETs is significantly reduced which is attributed to the reduced remanent polarization (P r ) from the highly scaled HZO and the enhanced voltage drop across the HZO as well as the improved interfacial quality from the AlON IL. In addition, the p-FeFET demonstrates a MW of 1.02 V up to 10 5 cycles with a long pulse 10 −4 s, superior to that of the n-FeFET due to the mitigated hot-electrons induced hole generation. Furthermore, the p-FeFET shows comparable retention performance with the n-FeFET. These results indicate that the p-FeFET possesses the competence of future memory applications without adding process complexity and introducing new substrate material. Index Terms-Non-volatile memory, ferroelectric HfZrO x , p-FeFET, pulsed I D -V G , memory window, reliability. I. INTRODUCTION S INCE ferroelectricity has been observed in doped-HfO 2 [1], it is regarded as one of the promising materials to implement ferroelectric field-effect transistors (FeFETs) for the applications of memory and neuromorphic computing due to its high compatibility with the incumbent VLSI technology. Although HfO 2 -based FeFETs have demonstrated several competitive advantages including scalability, low operation voltage, fast switching speed [2], robust endurance [3], and non-destructive readout ability [4], most of prior works focused on the investigation of n-channel FeFETs (n-FeFETs), only few researches for p-channel FeFETs (p-FeFETs) were studied [5]-[9]. To maximize the flexibility of circuit design in novel CMOS technology and enable full ferroelectric hierarchy [5], the characteristics of p-FeFETs should be also

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FeFET Memory Featuring Large Memory Window and Robust Endurance of Long-Pulse Cycling by Interface Engineering using High-k AlON

Cited by 51 publications

References 8 publications

High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory

Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film

Reduced Asymmetric Memory Window Between Si-Based n- and p-FeFETs With Scaled Ferroelectric HfZrOₓ and AlON Interfacial Layer

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