2022
DOI: 10.1016/j.apsusc.2022.152772
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Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures

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Cited by 2 publications
(1 citation statement)
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“…The threshold voltage shifts up to ∼4V according to poling voltage showed the modulation ability and feasibility of reconfigurable ferroelectric/GaN HEMT (figure 8(i)). Further works, including structural optimization and integration of other ferroelectric materials such as BTO, promise emerging high performance GaN HEMT application [135][136][137].…”
Section: Applications Of Heterogeneously Integrated Membranesmentioning
confidence: 99%
“…The threshold voltage shifts up to ∼4V according to poling voltage showed the modulation ability and feasibility of reconfigurable ferroelectric/GaN HEMT (figure 8(i)). Further works, including structural optimization and integration of other ferroelectric materials such as BTO, promise emerging high performance GaN HEMT application [135][136][137].…”
Section: Applications Of Heterogeneously Integrated Membranesmentioning
confidence: 99%