Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

Miyasako, Takaaki; Trinh, Bui Nguyen Quoc; Onoue, Masatoshi; Kaneda, Toshihiko; Tue, Phan Trong; Tokumitsu, Eisuke; Shimoda, Tatsuya

doi:10.7567/jjap.50.04dd09

Cited by 17 publications

(11 citation statements)

References 26 publications

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“…Figure 3(b) shows the electrical quantities, voltage, current and electric power applied on P1. Usually, PZT actuator is considered as a capacitance load [ 20 , 21 ]. The phase difference between voltage and current is approximately 80.9° in Figure 3(b) .…”

Section: Resultsmentioning

confidence: 99%

A Method for Evaluating the Electro-Mechanical Characteristics of Piezoelectric Actuators during Motion

Jin

Takita

Djamal

et al. 2012

Sensors

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The electro-mechanical characteristics of piezoelectric actuators which have being driven are evaluated in this paper. The force generated by actuators is measured as an inertial force of a corner cub prism which is attached to the actuators. The Doppler frequency shift of a laser beam, due to the motion of actuator, is accurately measured by a heterodyne interferometer. Subsequently, the mechanical quantities, such as velocity, acceleration, force, power and displacement, are calculated from the Doppler frequency shift. With the measurement results of current and voltage of the actuator, the relationships between electrical and mechanical characteristics are evaluated.

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Section: Resultsmentioning

confidence: 99%

A Method for Evaluating the Electro-Mechanical Characteristics of Piezoelectric Actuators during Motion

Jin

Takita

Djamal

et al. 2012

Sensors

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“…[ 22 ] Its use as a bottom electrode in PZT‐film stacks on glass substrates has had limited success, with large dielectric losses and/or deteriorated ferroelectric properties typically reported. [ 14,23,24 ] They were linked with either undesired interface layer between ITO and PZT formed upon high‐temperature annealing [ 25 ] or with non‐optimal energy‐band alignment between the two materials. [ 14,26 ]…”

Section: Introductionmentioning

confidence: 99%

Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Film

Glinšek

Mahjoub

Rupin³

et al. 2020

Adv Funct Materials

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Standing Lamb waves in vibrating plates enable haptic interfaces. If the out‐of‐plane displacement of these waves exceeds 1 µm at frequencies above 25 kHz, a silent friction modulation can be created between a human finger and a vibrating plate. A fully transparent friction‐modulation haptic device based on a piezoelectric thin film is demonstrated. The antisymmetric Lamb mode induced at 73 kHz allows for a functional performance that fulfills all conditions for practical use. Out‐of‐plane displacement reaches 2.9 µm when 150 V unipolar voltage is applied. The average transmittance of the whole transducer reaches 75%. The key points of this technology are: 1) a thin HfO2 layer between lead zirconate titanate film and substrate that prevents chemical reaction between them; 2) the efficient integration of transparent indium tin oxide electrodes and solution‐derived piezoelectric lead zirconate titanate thin film onto optical‐grade fused silica; and 3) the use of a transparent insulating layer made of SU‐8 photoresist.

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“…A year later, ITO channel FETs with Bi 4− x La x Ti 3 O 12 gate insulator with maximum device mobility of 9.1 cm 2 V −1 s −1 have been reported by Miyasako and co‐workers where the ferroelectric layer is only solution‐processed and the ITO semiconductor layer is sputtered . Completely solution‐processed lead zirconium titanate (PZT) [Pb(Zr, Ti)O 3 ] gate, ITO channel FETs has been reported by Shimoda and co‐workers . Here, the FETs have been prepared on STO substrates, the gate electrode is composed of solution‐processed LaNiO 3 (LNO), followed by PZT ferroelectric layer and at the end the ITO source/drain electrodes and a semiconducting ITO layer as channel material completed the bottom‐gate architecture.…”

Section: Gating Conceptsmentioning

confidence: 82%

Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

et al. 2018

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Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.

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Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

Cited by 17 publications

References 26 publications

A Method for Evaluating the Electro-Mechanical Characteristics of Piezoelectric Actuators during Motion

A Method for Evaluating the Electro-Mechanical Characteristics of Piezoelectric Actuators during Motion

Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Film

Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

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