Ferroelectric property improvement of poly(vinylidene fluoride/trifluoroethylene) polymer exposed to a plasma ambient

Abstract

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Laser Fabrication of Polymer Ferroelectric Nanostructures for Nonvolatile Organic Memory Devices

“…The coercive field can be estimated to be E c = 25 ± 6 MV/m, considering h P(VDF‑TrFE) has a value of 35 ± 5 nm. This value is similar to those found in previous works for continuous films of this ferroelectric copolymer, , although smaller than previously reported values for thicker films . In a first approach, we can attribute this fact to differences in crystallinity, depending on the thickness.…”

“…This value is similar to those found in previous works for continuous films of this ferroelectric copolymer, 10,48 although smaller than previously reported values for thicker films. 50 In a first approach, we can attribute this fact to differences in crystallinity, depending on the thickness. Finally, the nonirradiated bilayer film exhibits also a ferroelectric response, as evidenced from the hysteresis cycle shown by the blue curve in Figure 3a.…”

Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

“…One of the most critical issues for the fabrication of the transparent OfeOx-MTFTs is to form the transparent gate electrode patterns on the surface of P(VDF-TrFE). Because the polymeric film of P(VDF-TrFE) might be easily degraded by the plasma process engaged into the sputtering of TCO [169,170], plausible plasma damage should be minimized. The second issue is related to the photo-response of the transparent OfeOx-MTFTs.…”