Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)

Cho, Yongjae; Cho, Hyunmin; Hong, Sungjae; Kang, Donghee; Yi, Yeonjin; Park, Cheolmin; Park, Ji Hoon; Im, Seongil

doi:10.1016/j.nanoen.2020.105686

Cited by 15 publications

(9 citation statements)

References 50 publications

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“…The shift of threshold voltage and increase in drain current under the illumination indicate that the light-induced currents mainly come from the photogating effect and photoconductive effect. Also, the calculated maximal photoresponsivity and specific detectivity are up to ∼10 6 A/W and ∼10 13 Jones, respectively, under the lowest optical power density of 0.47 μW/cm 2 , which fully shows that ReS 2 has the excellent ability to detect weak light. In addition, the measurements of light pulse also illustrate that the ReS 2 device has fast photoresponse behavior, and the τ r and τ f of both RB1 and R2 are less than 100 ms. Also, the R contact and effective Schottky barrier height of R2 were also extracted through the variable temperature measurements from 100 to 300 K. With the increase in temperature, more traps and defects at the ReS 2 /SiO 2 interface are activated, so both the hysteresis window and maximal mobility are enhanced.…”

Section: Discussionmentioning

confidence: 74%

“…Although MoS 2 is intensely studied because of its mature preparation process, other 2D TMDCs and heterojunctions based on the 2D TMDCs have gradually been attracting extensive attention from researchers. WSe 2 , as a typical P-type material, can form a PN heterojunction with other N-type 2D TMDCs, which can achieve the band-to-band tunneling transport with the subthreshold swing of less than 60 mV/dec. , SnS 2 with the broadband response from ultraviolet to near-infrared has potential application in photodetectors. , There are also some other TMDCs, such as WS 2 , MoTe 2 , PdSe 2 , etc., that have been widely studied to explore their meaningful physical properties in the field of optoelectronics, memory and flexible electronics, etc. − …”

Section: Introductionmentioning

confidence: 99%

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ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

Jia

Dong

et al. 2022

ACS Appl. Nano Mater.

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Compared to traditional bulk materials, two-dimensional transition metal dichalcogenides (2D TMDCs) hold the potential in low power logic, photoelectric, and nonvolatile memory devices due to a tunable band structure, pure heterojunction interface, and photodetection for a wide spectral range. ReS 2 is chosen as the channel material in our work because it possesses excellent photoresponsivity. In addition, a BN dielectric is inserted between SiO 2 and ReS 2 as a gate dielectric. The pure heterojunction interface at BN/ReS 2 enhances the electric characteristics, including negligible hysteresis window and higher mobility. The photoelectric measurement results show that ReS 2 devices with or without the BN dielectric have an outstanding photoresponsivity of up to ∼10 6 A/W and a specific detectivity of up to ∼10 13 Jones as well as a fast photoresponse time of less than 100 ms under an extremely low optical power density of 0.47 μW/cm 2 , which fully proves that ReS 2 has the ability to detect very weak light. Also, the contact resistance and Schottky barrier height are also extracted with variable temperature measurements for the ReS 2 device. The higher contact resistance and unsymmetric output currents illustrate that the mirror force is the main factor leading to the reduction of the Schottky barrier height. Finally, the influences of the ReS 2 channel thickness on mobility and photoresponsivity are also studied by the device-to-device variability. The work in this paper further demonstrates that nanosheet-based ReS 2 can be regarded as an excellent candidate for application into the field of light-sensitive sensors under the condition of the CMOS-compatible process.

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Section: Discussionmentioning

confidence: 74%

Section: Introductionmentioning

confidence: 99%

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

Jia

Dong

et al. 2022

ACS Appl. Nano Mater.

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“…The current ferroelectric transistors using inorganic high-κ oxides are limited to back-gate structures because it is difficult to maintain inorganic ferroelectric material properties at the smooth interfaces of 2D semiconductors. Topgate structures can be prepared with ferroelectric polymers, however, the operating voltage is too high 106,107 . As in Fig.…”

Section: D Semiconductors For Specific Electronic Functionsmentioning

confidence: 99%

2D semiconductors for specific electronic applications: from device to system

2022

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The shrinking of transistors has hit a wall of material degradation and the specialized electronic applications for complex scenarios have raised challenges in heterostructures integration. Intriguingly, two-dimensional (2D) materials have excellent performance even at monolayer. The rich band structures and the lattice-mismatch-free heterostructures can further develop specific mechanisms to meet the demands of various electronic systems. Here we review the progress of 2D semiconductors to develop specific electronic applications from devices to systems. Focusing on the ultra-thin high-performance nanosheets for transistor channels, we consider channel optimization, contact characteristics, dielectric integration. Then we examined 2D semiconductors for specific electronic functions including computing, memory and sense. Finally, we discuss the specific applications of functionalized arrays aiming at problems that are difficult to solve with bulk materials, like the fusion of memory and computation and the all-in-one system.

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“…Three-terminal FeFETs have also been widely studied using non-ferroelectric 2D materials as the channel materials due to their superior compatibility with the ferroelectric gate stack [73][74][75][76][77][78][79][80], which could potentially tackle surface-induced performance degradation on the basis of the dangling bond-free in 2D materials surface, which could potentially address the short-channel effect in ultra-scaled devices. Here, the working mechanism of a three-terminal n-type FeFET is explained in figure 6.…”

Section: Three-terminal Devicesmentioning

confidence: 99%

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Chen

Pam

et al. 2022

Neuromorph. Comput. Eng.

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Ferroelectric memory devices with fast-switching speed and ultra-low power consumption have been recognized as promising building blocks for brain-like neuromorphic computing. In particular, ferroelectric memories based on 2D materials are attracting increasing research interests in recent years due to their unique properties that are unattainable in conventional materials. Specifically, the atomically thin 2D materials with tunable electronic properties coupled with the high compatibility with existing complementary metal-oxide-semiconductor (CMOS) technology manifests their potential for extending state-of-the-art ferroelectric memory technology into atomic-thin scale. Besides, the discovery of 2D materials with ferroelectricity shows the potential to realize functional devices with novel structures. This review highlights the recent progress in ferroelectric memory devices based on 2D materials for neuromorphic computing. The merits of such devices and the range of 2D ferroelectrics being explored to-date are reviewed and discussed, which include two- and three-terminal ferroelectric synaptic devices based on 2D materials platform. Finally, current developments and remaining challenges in achieving high-performance 2D ferroelectric synapses are discussed.

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Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)

Cited by 15 publications

References 50 publications

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

2D semiconductors for specific electronic applications: from device to system

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

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Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE)

Cited by 15 publications

References 50 publications

ReS2 Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

ReS2 Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

2D semiconductors for specific electronic applications: from device to system

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Contact Info

Product

Resources

About

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity

ReS₂ Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity