Ferromagnetic nano-conductive filament formed in Ni/TiO2/Pt resistive-switching memory

Nanoscale magnetization reversal by electric field-induced ion migration

“…10(e)]. [29,30] This is consistent with the fact that AMR occurred in ferromagnetic transition metal depends strongly on the direction of the magnetization with respect to the electric current direction. [57,58] By rotating the direction of the out-of-plane magnetic field with respect to the substrate surface with a fixed magnitude of 2 T in the LRS of the Co/ HfO 2 /Pt device [ Fig.…”

“…10(a) and 10(b)]. [29][30][31] It is found that the Ni/ TiO 2 /Pt device shows convexity in its AMR plot when the direction of the magnetic field is perpendicular to the direction electric current flowing across the device [Figs. 10(c) and 10(d)], whereas a concavity is observed when the magnetic field is aligned in the direction parallel to that of the device currents [ Fig.…”

“…[21,22,[25][26][27] In addition to modulating the magnetization through electrical field-induced ion migration and redistribution, the formation of foreign magnetic conductive filament via the ionization and injection of Co 3+ and Ni 2+ ions from electrochemically active ferromagnetic metal electrodes can also generate tunneling magnetoresistance (TMR) and anisotropic magnetoresistance (AMR) phenomena in different resistance states. [28][29][30][31] Enrichment of the bistable resistive switching characteristics of memory devices with MR behaviors allows the integration of other functions e.g., sensing and data processing into a single cell, and benefits the future breakthrough of von Neumann bottleneck issue that is faced by the modern computer systems.…”

Research progresses of resistive random access memory

“…(3) 阻变效应与隧道磁电阻效应(Tunnel Magnetoresistance, TMR) [228][229][230][231] 或巨磁电阻效应(Giant Magnetoresistance, GMR) [232] 的耦合. 山东大学的Li等人 [229] 利用CoO-ZnO纳米组分薄膜作为势垒层, 在Co/CoO- (4) 阻变效应与各向异性磁电阻效应(Anisotropic Magnetoresistance, AMR)的耦合 [233] . [239] , 在平面结构中可以 实现最小的存储单元面积--4F 2 (F为特征尺寸), 无 源阵列由于不依赖于CMOS工艺的前段制程, 可以进 行多层堆叠, 实现三维存储结构, 每个存储单元的有 效单元面积仅为4F 2 /N (N为堆叠的层数) [114] .…”

Quantum point contacts and resistive switching in Ni/NiO nanowire junctions

“…Devices based on transition metal oxides, such as NiO x , 2-4 TiO x , 4,5 HfO x , 6 Ta 2 O 5 , 5,7,8 and SiO x , 9,10 have all demonstrated resistive switching with some devices exhibiting resistance ratios and cycling endurances sufficient for many computational memory applications. 9,[11][12][13][14][15][16] Resistive switching in oxide-based systems is thought to arise from the rupture and reformation of nanoscale conducting filaments that span the oxide. 1,4,13,[17][18][19] A fully formed, intact filament yields the conductive LRS, while a ruptured filament leads to the HRS.…”