Ferromagnetic Properties of Mn-Doped III–V Semiconductor Quantum Wells

Investigations on cobalt doped GaN for spintronic applications

“…Wang et al [6] observed theoretically that Mn-Mn interaction is responsible for ferromagnetism when Mn is buried inside the bulk but is antiferromagnetic when the coupling takes place at the surface of GaN matrix. Kim et al [7] had shown that p-type GaMnN quantum well is ferromagnetic at room temperature with weak spin-exchange interaction. Tao Zhi-Kuo et al [8] reported room temperature ferromagnetic behavior in MOCVD grown iron doped GaN.…”

Observation of quantum size effect at the conduction band bottom of n-type ferromagnetic semiconductor (In,Fe)As thin films

“…In FMSs, due to the strong dependence of magnetic properties on the density of states (DOS), QSE is expected to induce novel phenomena and functions such as the quantization of Curie temperature (T C ) or wavefunction engineering of ferromagnetism in two-dimensional electron systems. [1][2][3] Furthermore, QSE was predicted to strongly enhance the tunnel magnetoresistance in magnetic tunnel junctions consisting of double-barrier quantum wells. [4][5][6] So far, however, mainstream studies on FMSs have been concentrated on Mnbased FMSs, in which realizing the quantization of carriers is very difficult because the hole carriers are in the impurity band (IB) and their coherence length is extremely short.…”