FET Characterization using gated-TLM structure

Baier, S.M.; Shur, M. S.; Lee, K.; Cirillo, N.C.; Hanka, S.A.

doi:10.1109/t-ed.1985.22422

Cited by 34 publications

(23 citation statements)

References 12 publications

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“…In order to clearly investigate the role of contacts on the device performance, we used the gated transmission line model 15 to extract R c and R ch for a set of Au/pBTTT and Pt/pBTTT transistors. For a series of devices with fixed W, the total resistance,R on = ‫ץ‬V DS / ‫ץ‬I D , is calculated at a small V DS and plotted as a function of L for each gate voltage.…”

mentioning

confidence: 99%

Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1

Hamadani

Gundlach

McCulloch

et al. 2007

Applied Physics Letters

232

187

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Current distribution effects in organic sexithiophene field effect transistors investigated by lock-in thermography: Mobility evaluation issues Appl. Phys. Lett. 93, 243504 (2008); 10.1063/1.3049613Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors Temperature and electric-field dependence of the mobility of a single-grain pentacene field-effect transistor

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mentioning

confidence: 99%

Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1

Hamadani

Gundlach

McCulloch

et al. 2007

Applied Physics Letters

232

187

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“…In this letter, we present the results of the experiments that allow us to locate the device active layer regions responsible for the current collapse. We used gated transmission line model ͑GTLM͒ measurements 8,9 ͓see Fig. 1͑a͔͒ under pulsed gate bias conditions in order to isolate the changes of the channel resistance under and outside the gate during the transient.…”

mentioning

confidence: 99%

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Simin

Koudymov

Tarakji

et al. 2001

Applied Physics Letters

113

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Gated transmission line model pattern measurements of the transient current–voltage characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs were made to develop a phenomenological model for current collapse. Our measurements show that, under pulsed gate bias, the current collapse results from increased source–gate and gate–drain resistances but not from the channel resistance under the gate. We propose a model linking this increase in series resistances (and, therefore, the current collapse) to a decrease in piezoelectric charge resulting from the gate bias-induced nonuniform strain in the AlGaN barrier layer.

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“…One way around this problem is to use a test structure such as that depicted in Fig. 8, which basically contains two or more FET's with nothing different except the gate lengths (21,40). Thus, the resistance Rk between two ohmic contacts separated by (/ok + 2lA) is Note that ifRsc = Rs for all k, i.e., no gates, then the pattern in Fig.…”

Section: A P a C I T A N C E -C O N D U C T A N C E Profiiing--onementioning

confidence: 99%

“…This was Paper 528 presented at the San Diego, CA Meeting of the Society, Oct. [19][20][21][22][23][24] 1986.…”

Section: Acknowledgmentsmentioning

confidence: 99%

Electrical Characterization of Ion Implantation into GaAs: Topography and Depth Profiles

Look

1987

J. Electrochem. Soc.

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Recent advances in the characterization of ion‐implanted normalGaAs samples have included whole wafer mapping (topography) and depth profiling techniques. We review several methods for mapping electrical parameters, including the dark‐spot resistance (DSR), and the microwave photoconductance techniques. In addition, we suggest a new photo‐Hall technique which would allow mobility (μ) and carrier‐concentration false(nfalse) mapping as well as that of resistivity (ρ). Finally, we review methods for obtaining ρ, μ, and n depth profiles, with particular emphasis on the application of the magnetoresistance techniques in actual field‐effect transistor structures.

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FET Characterization using gated-TLM structure

Cited by 34 publications

References 12 publications

Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1

Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Electrical Characterization of Ion Implantation into GaAs: Topography and Depth Profiles

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