Field effect measurement on silicon and germanium with high frequency current

Abstract

The method of measurement of the field effect on silicon has been improved. The improvement consists in producing the contact between bulk andinversion layer, which are separated by a depletion layer of high resistance, by means of a high frequency current for which the reactance of the capacity between bulk and inversion layer is low.Es wurde das Verfahren, mit dem der Feldeffekt a n Silizium gemessen wird, verbessert. Die Verbesserung besteht darin, da13 zur Herstellung des Kontaktes zwischen dem Volumen und der Inversionsschicht, die durch die hochohmige Verarmungsschicht getrennt sind, ein hochfreqnenter Probenstrom verwendet wird, fur den der Scheinleitwert der Kapazitat zwischen Volumen und Inversionsschicht groB ist.

Extension of the surface recombination model and unique determination of the recombination energy by means of reverse current measurements

“…4 and 5 show the reverse current variation and the surface conductance variationversus the influenced charge, i.e. the field effect curves, respectively, in equilibrium (upper curve) and in stationary non-equilibrium (lower curve) for specimens etched in CP-4 and stored up in air, see also [7]. Fig.…”

“…By means of a field electrode surface charges were influenced and as a result the band bending and according to (1) and (2) the generation of carriers is varied. The shape of the specimen is described in [7]. Fig.…”