Field-effect studies of C60 thin films before and after implantation with potassium

Trouillas, P.; Ratier, Bernard; Moliton, André; Pichler, K.; Friend, Richard H.

doi:10.1016/s0379-6779(96)03749-6

Cited by 4 publications

(1 citation statement)

References 27 publications

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“…The phenomenon of charge injection controlled by electric field is observed in the field-effect transistor (FET) structure with both pristine and doped fullerene C 60 [1][2][3][4]. Because fullerene C 60 with its unique properties is considered as a prospective material for FET devices, the important problems determining the FET characteristics are connected with the shape of the distribution of gate-induced charges in the C 60 crystal.…”

Section: Introductionmentioning

confidence: 99%

Distribution of field-induced charges in C60 fullerite

Kuprievich

Kapitanchuk

Shramko

et al. 2006

Low Temperature Physics

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The profile of injected charges in a C 60 -based field-effect transistor (FET) is considered. A simple scheme for calculations of the charge distribution between the 2D layers of C 60 molecules is founded on a small magnitude of the interball electron hopping. Analytical solutions of the equations for the charge distributions are obtained in the limits of thick and thin crystals. The charge density is shown to drop exponentially with the crystal depth. The calculations predict the relative part of induced charges involved in the surface layer to be 3/4 and 2/3 in the cases of electron and hole injection, respectively. PACS: 71.10.-w, 31.25.Eb, 73.90.+f

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Section: Introductionmentioning

confidence: 99%

Distribution of field-induced charges in C60 fullerite

Kuprievich

Kapitanchuk

Shramko

et al. 2006

Low Temperature Physics

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Electrical and optical properties of the B+ and P+ implanted C60 thin films

Dharmarasu

Sakai

Kojima

et al. 2001

Journal of Applied Physics

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Conductivity control of the boron and phosphorus ion implanted C60 films subjected to various doses with multiple energy has been investigated. Temperature dependent conductivity shows the semiconducting nature of the B+ and P+ implanted films. Fourier transform infrared spectra of the B+ and P+ implanted C60 films show the structural change of the C60 into amorphous carbon. Optical gaps of the implanted films have been observed as a function of implantation dose. The dramatic increase in the conductivity and the reduction in the optical gap on ion implantation are thought to be attributed to an increase in sp2 bounded states, lattice damage, and substitutional impurity doping with ion implantation. The B+ and P+ implantation into C60 and amorphous carbon suggests the possibility of fabricating carbon based homojunction solar cells.

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Post Annealing Studies Of C₆₀ Ion Implanted Thin Films

et al. 2000

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Physical properties of multiple-energy B-ion implanted C60 thin films were investigated for various doses. Fourier Transform Infra-red Spectroscopy (FTIR) results indicate the structural transformation of C60 to amorphous carbon phase during implantation. The conductivity type of the implanted films is found to be p-type and the conductivity measurements reveal a dramatic increase in the conductivity with ion implantation. Temperature dependent conductivity shows the semiconducting nature of the B-ion implanted films. The optical absorption coefficient and optical gap of the implanted films have been observed as a function of B-ion dose. Measurements on implanted films subjected to thermal annealing indicate the removal of the defects caused during the implantation. Ion implantation-induced defects are found to partially annihilate with the annealing temperature. Electrical conductivity and optical gap are determined in the post-implanted films. The observation of the systematic increase in the conductivity of the annealed films is due to the removal of the defects and the formation of defect free boron impurity acceptor.

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Field-effect studies of C60 thin films before and after implantation with potassium

Cited by 4 publications

References 27 publications

Distribution of field-induced charges in C60 fullerite

Distribution of field-induced charges in C60 fullerite

Electrical and optical properties of the B+ and P+ implanted C60 thin films

Post Annealing Studies Of C₆₀ Ion Implanted Thin Films

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Field-effect studies of C60 thin films before and after implantation with potassium

Cited by 4 publications

References 27 publications

Distribution of field-induced charges in C60 fullerite

Distribution of field-induced charges in C60 fullerite

Electrical and optical properties of the B+ and P+ implanted C60 thin films

Post Annealing Studies Of C60 Ion Implanted Thin Films

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Product

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Post Annealing Studies Of C₆₀ Ion Implanted Thin Films