Field Emission from Carbon Nanostructures

Giubileo, Filippo; Bartolomeo, Antonio Di; Iemmo, Laura; Luongo, Giuseppe; Urban, Francesca

doi:10.3390/app8040526

Cited by 151 publications

(102 citation statements)

References 178 publications

(195 reference statements)

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“…Graphene is commonly produced by exfoliation from graphite [28,29], epitaxial growth on SiC [30] or chemical vapor deposition (CVD) [31,32]. In particular, CVD produces uniform and large-scale graphene flakes of high-quality and is compatible with the silicon technology; therefore, it has been largely exploited to realize new electronic devices such as diodes [33][34][35][36], transistors [37][38][39], field emitters [40,41], chemical-biological sensors [42,43], optoelectronic systems [44], photodetectors [45][46][47][48][49][50] and solar cells [51].…”

Section: Introductionmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carrier mobility dependence on the gate-voltage. We find that the gate voltage modulates both the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that raising the temperature lowers the carrier mobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance as low as 700 Ω·μm can be achieved by the zig-zag shaping of the Ni contact.

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Section: Introductionmentioning

confidence: 99%

Contact resistance and mobility in back-gate graphene transistors

et al. 2020

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“…For an array of the field emitters, in most of the papers, including some recently reported [32,33], it is related to the Fowler-Nordheim law and it has a simplified form (considered as too simplified and inadequate-for more details please refer to [25]):…”

Section: Discussionmentioning

confidence: 99%

“…E is related to the macroscopic electric field with the field enhancement factor, β; φ is the work function of the material-an intrinsic material property defined by the energy difference between the Fermi level and the vacuum level. A and B are constants, where A = 1.54 × 10 −6 AV −2 eV and B = 6.83 × 10 7 cm −1 V eV −3/2 [32]. Furthermore, to determine the field-emission properties, the I-V relation is often translated to the relation of the current density and the applied electric field (JE 2 vs. 1/E), so-called "F-N coordinates" [26].…”

Section: Discussionmentioning

confidence: 99%

Field Emission Cathodes to Form an Electron Beam Prepared from Carbon Nanotube Suspensions

Laszczyk

2020

Micromachines

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In the first decade of our century, carbon nanotubes (CNTs) became a wonderful emitting material for field-emission (FE) of electrons. The carbon nanotube field-emission (CNT-FE) cathodes showed the possibility of low threshold voltage, therefore low power operation, together with a long lifetime, high brightness, and coherent beams of electrons. Thanks to this, CNT-FE cathodes have come ahead of increasing demand for novel self-sustaining and miniaturized devices performing as X-ray tubes, X-ray spectrometers, and electron microscopes, which possess low weight and might work without the need of the specialized equipped room, e.g., in a harsh environment and inaccessible-so-far areas. In this review, the author discusses the current state of CNT-FE cathode research using CNT suspensions. Included in this review are the basics of cathode operation, an evaluation, and fabrication techniques. The cathodes are compared based on performance and correlated issues. The author includes the advancement in field-emission enhancement by postprocess treatments, incorporation of fillers, and the use of film coatings with lower work functions than that of CNTs. Each approach is discussed in the context of the CNT-FE cathode operating factors. Finally, we discuss the issues and perspectives of the CNT-FE cathode research and development.

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“…Carbon nanotube (CNT) fibers [1][2][3][4][5][6][7][8][9][10][11][12] have demonstrated significant promise as field emission (FE) cathodes due to their large aspect ratios and high electrical and thermal conductivities. They can potentially be used as FE cathodes in a wide range of applications, including compact radiation sources [13][14][15][16], electron guns for ring and linear accelerators [17], and vacuum nanoelectronics [18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Temperature Comparison of Looped and Vertical Carbon Nanotube Fibers during Field Emission

et al. 2018

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Carbon nanotube (CNT) fiber-based emitters have shown great potential to deliver stable, high current beams for various potential applications. Because of joule heating, CNT field emitters are heated to high temperatures during field emission. It is important to improve the thermal management of emitters to increase their reliability and prevent premature failure. This paper compares the field emission characteristics and the temperature distribution of a new configuration of a looped CNT fiber emitter with a traditional single vertical CNT fiber emitter. It is found that the maximum temperature of the looped fiber emitter (~300 °C) is significantly reduced compared to that of the vertical fiber (~600 °C) at the same emission current of 3 mA. The experimentally measured temperature distribution is compared with a recent theory on joule heating of a one-dimensional conductor. This study provides new insights into the design of high performance field emitters.

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Field Emission from Carbon Nanostructures

Cited by 151 publications

References 178 publications

Contact resistance and mobility in back-gate graphene transistors

Contact resistance and mobility in back-gate graphene transistors

Field Emission Cathodes to Form an Electron Beam Prepared from Carbon Nanotube Suspensions

Temperature Comparison of Looped and Vertical Carbon Nanotube Fibers during Field Emission

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