2008
DOI: 10.1016/j.diamond.2007.12.012
|View full text |Cite
|
Sign up to set email alerts
|

Field emission from nanodiamond grown with ‘ridge’ type geometrically enhanced features

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
24
0

Year Published

2009
2009
2019
2019

Publication Types

Select...
6
2
1

Relationship

2
7

Authors

Journals

citations
Cited by 26 publications
(24 citation statements)
references
References 11 publications
0
24
0
Order By: Relevance
“…Figure 3(b) shows the 'ridge' like microstructure of the nanodiamond film of each UME, see inset. Material characterization using Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS) and vacuum field emission studies from a similar planar nanodiamond film have been reported previously (24)(25). …”
Section: Sem Characterizationmentioning
confidence: 99%
“…Figure 3(b) shows the 'ridge' like microstructure of the nanodiamond film of each UME, see inset. Material characterization using Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS) and vacuum field emission studies from a similar planar nanodiamond film have been reported previously (24)(25). …”
Section: Sem Characterizationmentioning
confidence: 99%
“…The UME has a 'donut' shape, with a thick and raised edge and a slightly recessed part in the middle, as seen in the inset of figure 2(b). Material characterization using Raman spectroscopy and Xray Photoelectron Spectroscopy of the nanodiamond film have been reported previously [33][34]. …”
Section: Ultramicroelectrode Array Fabricationmentioning
confidence: 99%
“…Electron emission current was then observed at cathode temperatures ranging from 500 o C to 900 o C at varying applied anode voltages. This data was analyzed to predict the expected emission current at 0 applied field by utilizing the Schottky equation [3] which describes the change in thermionic emission current influenced by an applied field F as: (2) where and e and are the electron charge and the permittivity of free space respectively.…”
Section: Experimental Approachmentioning
confidence: 99%
“…The preparation of the silicon substrates for deposition and the growth process have been described elsewhere [2].…”
Section: Experimental Approachmentioning
confidence: 99%