Field emission from patterned SnO2 nanostructures

Zhang, Yongsheng; Kang, Yu; Li, Guodong; Peng, Deyan; Zhang, Qiuxiang; Hu, Hongmei; Xu, Feng; Bai, Wei; Ouyang, Shuai; Zhu, Zhen

doi:10.1016/j.apsusc.2006.01.009

Cited by 17 publications

(11 citation statements)

References 29 publications

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“…26 The FEE behaviors of patterned DGH nanorod arrays, viz., low E 0 , large J, and high β are comparable with those of other patterned nanostructured field emitters, as summarized in Table I. 2,[27][28][29][30][31][32][33][34][35][36][37] Notably, the patterned DGH nanorod arrays are much more robust (lifetime > 700 min), which is actually of more concern from a device application point of view. The better FEE behavior for DGH nanorod arrays, as compared with the NCD pads and the planar NCD films, can apparently be ascribed to higher β-values for the DGH nanorod arrays, as all of the emitters are made of the same diamond materials.…”

Section: -2supporting

confidence: 48%

Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties

et al. 2017

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A “patterned-seeding technique” in combination with a “nanodiamond masked reactive ion etching process” is demonstrated for fabricating vertically aligned diamond-graphite hybrid (DGH) nanorod arrays. The DGH nanorod arrays possess superior field electron emission (FEE) behavior with a low turn-on field, long lifetime stability, and large field enhancement factor. Such an enhanced FEE is attributed to the nanocomposite nature of the DGH nanorods, which contain sp2-graphitic phases in the boundaries of nano-sized diamond grains. The simplicity in the nanorod fabrication process renders the DGH nanorods of greater potential for the applications as cathodes in field emission displays and microplasma display devices.

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Section: -2supporting

confidence: 48%

Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties

et al. 2017

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“…Furthermore, the n-type doping is known to enhance field emission by lifting the fermi level and lowering the work function. The indium-doped tin oxide (ITO), an important transparent metal-oxide semiconductor, with the advantage of lower surface potential barrier than that of the metals, has been widely investigated [14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of In-doped SnO₂nanowire arrays and its field emission investigations

Bhise

Late

Sathe

et al. 2010

Journal of Experimental Nanoscience

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The field emission of In-doped SnO 2 wire array has been performed in parallel plate diode configuration. A maximum current density of 60 mA/cm 2 is drawn from the emitter at an applied field of 4 V/mm. The nonlinearity in the Fowler-Nordheim plot, characteristics of semiconductor emitter has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability recorded at a preset value of 1 mA is observed to be good. The high emission current density, good current stability and mechanically robust nature of the wires offer unprecedented advantages as promising cold cathodes for many potential applications based on field emission.

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“…The resulting organic engineering and functional hybrid films [2-4] have found a wide range of applications in colloid self-assembly [5], packaging [6-10], biotechnology [11][12][13], sensors [14][15][16], and opt-electronic devices [17][18][19][20][21][22][23][24][25][26][27][28][29][30]. The controlled depositions of high quality inorganic oxides on polymeric substrates are often necessary to provide key functions for the devices through themselves, interactions with metals [31] and other oxides [32,33], as well as surface chemical derivations [5,12,13]. For achieving satisfactory applications, such organic/inorganic hybrid materials should possess at least five characters: stable interface adhesion [34][35][36][37], tunable coating thickness [34], the ability of large-area patterning [38,39], low surface roughness [40,41] and high optical transparency [34].…”

Section: Introductionmentioning

confidence: 99%

Interface-directed sol-gel: direct fabrication of the covalently attached ultraflat inorganic oxide pattern on functionalized plastics

Gan

Yang

2010

Sci. China Chem.

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For plastic electronics and optics, the fabrication of smooth, transparent and stable crack-free inorganic oxide films (and patterning) on flexible polymeric substrates with strong bonding strength and controllable thickness from nanometers to micrometers is a key but still remains a challenge. Among versatile inorganic oxides, silica oxide film as SiO x is especially important because this semiconductor material could provide crucial properties in devices or serve as a base layer for further multilayer construction. In this paper, we describe a new interface-directed sol-gel method to fabricate flexible high quality silicon oxide film onto commodity plastics. The resulting crack-free silica film has strong covalent bonding with polymer substrates, homogeneous morphology with ultralow roughness, highly optical transparency, tunable thickness from nm to μm, and easy patterning ability. Such fabrication strategy relies on a novel photocatalytic oxidation reaction by photosensitive ammonium persulfate (APS), which is able to fabricate highly reactive hydroxyl monolayer surface on inert polymeric substrates. This kind of hydroxylated surface could serve as nucleation and growth sites to initiate surface sol-gel process. As a result, well-defined SiO x film deposition (gelation) occurs, and patterned hydroxylation regions could be easily utilized to induce the formation of patterned oxide film arrays. Our strategy also excludes the requirements of clean room and vacuum devices so as to fulfill low-cost and fast fabrication demands. Two application examples from such high quality SiO x layer onto plastics are given but should not be limited within these. One is that oxygen permeation rate of SiO x deposited polymer film decreases 25 times than pristine polymer substrate, which is good for the potential packaging materials. The other one is that silanization monolayer, for example, 3-aminopropyltriethoxysilane (APTES), could be successfully constructed onto silica layer through classical silanization reaction, which is applicable for many potential purposes, for instance, proteins could be accordingly immobilized onto plastic support with effective signal-to-background ratio. Moreover, we further demonstrate that this interface-directed sol-gel strategy is a general method which could be successfully extended to other high quality oxide film fabrication, e.g., TiO 2 . surface patterning, silicon oxide, sol-gel, polymer surface modification, functional coatings

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Field emission from patterned SnO2 nanostructures

Cited by 17 publications

References 29 publications

Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties

Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties

Fabrication of In-doped SnO₂nanowire arrays and its field emission investigations

Interface-directed sol-gel: direct fabrication of the covalently attached ultraflat inorganic oxide pattern on functionalized plastics

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Field emission from patterned SnO2 nanostructures

Cited by 17 publications

References 29 publications

Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties

Vertically aligned diamond-graphite hybrid nanorod arrays with superior field electron emission properties

Fabrication of In-doped SnO2nanowire arrays and its field emission investigations

Interface-directed sol-gel: direct fabrication of the covalently attached ultraflat inorganic oxide pattern on functionalized plastics

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Fabrication of In-doped SnO₂nanowire arrays and its field emission investigations