Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Lee, Jae-Gil; Lee, Hojung; Cha, Ho-Young; Lee, Minseong; Ryoo, Yeonmi; Seo, Kwang-Seok; Mun, Jae‐Kyoung

doi:10.3938/jkps.59.2297

Cited by 15 publications

(6 citation statements)

References 6 publications

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“…As the L GD increased, the V knee increased and the I-V slope in the linear region decreased. This is typical in planar-type AlGaN/GaN HEMTs [35,36]. The planar device also exhibited pronounced current decrease in the high drain bias region.…”

Section: B Improvement Of Current Stabilitymentioning

confidence: 56%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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University. His research interests included surface passivation and device processing technologies for III-V compound semiconductors. Currently, his major activity expanded into characterization and control of surfaces and interfaces of GaN and related materials and their application to GaN-based electron devices. He has authored or co-authored over 160 papers in scientific and technical journals.

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Section: B Improvement Of Current Stabilitymentioning

confidence: 56%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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“…One important reason is that the E-field crowding at the gate edge leads to premature breakdown in the off-state. To address this issue, several technologies have been employed, including the field plate (FP) [13], RESURF technique [14], and polarization junction concept [15,16]. However, the introduction of the FP will increase the parasitic capacitance.…”

Section: Introductionmentioning

confidence: 99%

Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

Yang

Deng

et al. 2019

Sci. China Inf. Sci.

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A novel three-dimensional hole gas (3DHG) enhancement-mode (E-mode) heterostructure fieldeffect transistor (HFET) is proposed and investigated. It features back-to-back graded AlGaN (BGA) barrier layers consisting of a positive-graded AlGaN layer and a negative-graded AlGaN layer, which form polarization gradient and subsequently induce the three-dimensional electron gas (3DEG) and 3DHG in the positiveand negative-graded AlGaN layers, respectively. The source and drain are located at the same side of the metal-insulator-semiconductor (MIS) trench gate, and the source is in contact with the HfO 2 gate insulator. First, the on-state current is significantly improved owing to the high-density 3DEG in the positive-graded AlGaN. Next, the vertical conductive channel between the source and 3DEG is blocked by the 3DHG, thereby realizing the E-mode. The threshold voltage (V th) can be modulated by a partial doping conductive channel. Subsequently, a high breakdown voltage (BV) is obtained, because the polarization junction formed by the polarization charges assists in depleting the drift region in the off-state. Next, the BGA-HFET is smaller than the conventional HFET (Con-HFET) owing to the special location of the source. The BV of the proposed HFET sharply increases to 919 V from 39 V of the Con-HFET with the same gate-drain spacing, and the saturation drain current is increased by 103.5%.

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“…8(a) -(d) indicate the electron concentrations after the occurrence of breakdown leakage currents and each biases are displayed in inset of figures. With the aforementioned off-state breakdown characteristics, introduction of a proper passivation layer such as either AlN thin film [26,27] or field plate [28,29] enhances the robustness against the breakdown.…”

Section: Fig 1 (A) Three-dimensional Schematic View and (B)mentioning

confidence: 99%

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Kim¹,

Seo²,

Yoon³

et al. 2015

Journal of Electrical Engineering and Technology

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-Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.

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Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Cited by 15 publications

References 6 publications

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

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