Figure of Merit for Carbon Nanotube Photothermoelectric Detectors

Erikson, Kristopher J.; He, Xiaowei; Talin, A. Alec; Mills, Bernice E.; Hauge, Robert H.; Iguchi, Takashi; Fujimura, Naoki; Kawano, Yukio; Kono, Junichiro; Léonard, François

doi:10.1021/acsnano.5b06160

Cited by 57 publications

(54 citation statements)

References 21 publications

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“…1c and Fig. 2c 28 . This reference and references therein also show experimentally that for zero-bias devices the noise is limited by the thermal noise.…”

Section: Figures 1abmentioning

confidence: 89%

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe₅

Léonard

Collins

et al. 2017

ACS Appl. Mater. Interfaces

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The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe 5 has been shown to be a Dirac semimetal possessing unique topological electronic and optical properties. Here we present spatially-resolved photocurrent measurements on devices made of nanoplatelets of ZrTe 5 , demonstrating the photothermoelectric origin of the photoresponse. Due to the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz 1/2 at room temperature for visible light illumination at zero bias. We also show that these devices suffer from significant ambient reactivity such as the formation of a Te-rich surface region driven by Zr oxidation, as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.

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“…1c and Fig. 2c 28 . This reference and references therein also show experimentally that for zero-bias devices the noise is limited by the thermal noise.…”

Section: Figures 1abmentioning

confidence: 89%

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe₅

Léonard

Collins

et al. 2017

ACS Appl. Mater. Interfaces

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“…To correlate the performance of CNT‐based PTE detector with various factors, a general expression of NEP was proposed by Erikson et al, which is stated as follows:

NEP = \frac{2 \sqrt{k_{normalB} T^{2} W L} \sqrt{G}}{\sqrt{Z T}}

where W is the width of the active material, L is its length, and G is the heat transfer coefficient to the substrate. This equation is based on the hypothesis that the noise spectrum is governed by the thermal Johnson noise.…”

Section: D Material–based Photothermoelectric Detectorsmentioning

confidence: 99%

Progress of Photodetectors Based on the Photothermoelectric Effect

et al. 2019

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the radiation emitted by the room-temperature object is mainly in the LWIR region, with the peak wavelength of about 10 µm. [1] Because of these two properties, photodetectors operating in the LWIR range are of significant importance for the heat-seeking technologies, such as all-weather surveillance, night vision, and missile guidance. To detect such lowenergy radiation by photon detectors, commonly used photosensitive materials are narrow-bandgap semiconductors (e.g., HgCdTe) and quantum wells (e.g., GaAs/ InGaAs). [2,3] For these photodetectors, the dark current at room temperature usually is large, and thus a cryogenic cooling unit is indispensable, which certainly increases the size and weight of photon detectors. Therefore, to miniaturize the volume and weight of LWIR detectors, the development of high-performance uncooled photodetectors is vital. Thermal detectors are well known for their ultra-broadband spectral response from UV to far-infrared and even to terahertz at room temperature. The excellent ability of terahertz radiation (0.1-1 mm) to penetrate through nonconducting materials renders it particularly attractive for applications in tomographic inspection. [4,5] Thermal detectors are based on the measurement of temperature-dependent properties, such as the resistance for bolometers, the temperature-difference-driven voltage for photothermoelectric (PTE) detectors, and the spontaneous polarization for pyroelectric (PE) detectors. The photoresponse in PE detectors depends on the variation of the spontaneous polarization vector with temperature; therefore, an external chopper is needed when measuring the power of continuous-wave (CW) radiation. For bolometers, an external bias is required, which introduces the extra 1/f noise. The typical temperature-sensitive materials in commercial bolometers are vanadium oxide (VO x ) or amorphous silicon. The main advantage of VO x lies in that its temperature coefficient of resistance is high (≈4% K −1 ) while the resistivity remains low, which is beneficial to reduce the noise level. [6] Detailed comparisons among different kinds of photodetectors are listed in Table 1.PTE detectors are based on the photothermal conversion and thermoelectric effect. As schematically shown in Figure 1, after absorbing the photons on one side of PTE detector, a temperature difference (ΔT) is built up, which drives the directed diffusion of charge carriers from the hot end to the cold end, establishing an electric potential difference (ΔU). This process High-performance uncooled photodetectors operating in the long-wavelength infrared and terahertz regimes are highly demanded in the military and civilian fields. Photothermoelectric (PTE) detectors, which combine photothermal and thermoelectric conversion processes, can realize ultra-broadband photodetection without the requirement of a cooling unit and external bias. In the last few decades, the responsivity and speed of PTE-based photodetectors have made impressive progress with the discovery of novel thermoelectric materials and ...

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“…The second type of thermal detectors, exploiting the photothermoelectric (PTE) effect as detection mechanism, and rquires another figure of merit, ZT. [53] The ZT factor, is determined according to 2…”

Section: Photodetector Figures Of Meritmentioning

confidence: 99%

“…CNTs hold significant Seebeck coefficients of 40 µV K -1 and ≈200 µV K -1 for metallic and semiconducting SWCNT, respectively, they show a thermoelectric and bolometric effects as well. [29,53,125,126] Hence, a photocurrent, due to separated electrons and holes, is always accompanied by thermoelectric and bolometric effects, if not otherwise controlled. By blending different chiralities into a CNT film, one can tailor the superposition of many individual VIS and IR absorption features and even reinforce THz interaction by an increasing degree of alignment.…”

Section: Wileyonlinelibrarycommentioning

confidence: 99%

Carbon Photodetectors: The Versatility of Carbon Allotropes

Richter

Heumüller

Matt

et al. 2016

Advanced Energy Materials

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Carbon‐based organic electronics are a technology, with the potential of complementing and substituting opto‐electronic devices based on inorganic semiconductors and metals. In the group of organic semiconductors, carbon allotropes come with outstanding opto‐electric properties and are remarkable candidates for novel applications like printed electronics via solution‐processing on mechanically flexible, robust and light weight substrates, while reducing the environmental impact. Carbon allotropes like fullerenes, graphene quantum dots (GQD), carbon nanotubes (CNT), graphene and also diamond are especially interesting for photodetectors due to their tunable bandgap, high absorption coefficients and high charge carrier mobilites. These unique opto‐electric properties of the allotropes, which strongly depend on their molecular dimensionality (0D, 1D, 2D and 3D), allow each allotrope to be used in a preferential range. Hence, relying on the intrinsic properties of carbon allotropes or by hybridization, carbon‐based photodetectors are built for a spectral bandwidth, reaching from gamma‐rays to THz radiation. This review highlights the recent advances in photodetectors based on fullerenes, GQDs, CNTs, graphene and diamond, with the focus on room temperature‐operated devices. The versatility of multi‐dimensional carbon allotropes is outstanding, and promising results outline the maturing of all carbon‐based photodetection across the technologically relevant wavelengths.

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Figure of Merit for Carbon Nanotube Photothermoelectric Detectors

Cited by 57 publications

References 21 publications

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe₅

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe₅

Progress of Photodetectors Based on the Photothermoelectric Effect

Carbon Photodetectors: The Versatility of Carbon Allotropes

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Figure of Merit for Carbon Nanotube Photothermoelectric Detectors

Cited by 57 publications

References 21 publications

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

Progress of Photodetectors Based on the Photothermoelectric Effect

Carbon Photodetectors: The Versatility of Carbon Allotropes

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Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe₅

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe₅