Filling of Deep-sub-µm Through Holes and Trenches by High Vacuum Planar Magnetron Sputter

Copper Filling of Deep Sub-µm Through-Holes by High-Vacuum Planar Magnetron Sputtering Using Argon Gas with Added Nitrogen: Optimum Quantity of Nitrogen in Argon Gas

“…In these techniques, it has been pointed out that when sputtering is performed using a gas that includes nitrogen (N 2 ) in the sputtering argon gas (Ar), the method becomes highly effective at filling in through-holes with diameters of approximately 100 nm. 8) In this study, we used high-vacuum sputtering [9][10][11] because the sputter atoms and recoil molecules exhibit good linear motion properties, and due to the advantage that the atoms and recoil molecules have high energy. With regard to the causes of the favorable filling effect, the added N 2 gas acts in the same way as leveling agents used in electroplating, causing preferential adsorption at the edges of trenches and through-holes, 12) but there are still many points of uncertainty in this mechanism.…”

“…Sputtering was performed for t ¼ 15 min under a sputtering gas pressure of p ¼ 9:0 Â 10 À2 Pa, a target voltage of V B ¼ 6:0 kV, and a target current of I B ¼ 40 mA. 8,11) The substrate temperature was fixed at 280 C. The amount of N 2 added to the Ar gas was varied between 0.5, 1.0, 3.0, 10, and 20 at. %.…”

Novel Discharge Logic Gate for Reducing the Number of Scanning Drive Circuits of Plasma Display Panel

“…8) In this study, we used high-vacuum sputtering [9][10][11] because the sputter atoms and recoil molecules exhibit good linear motion properties, and due to the advantage that the atoms and recoil molecules have high energy. With regard to the causes of the favorable filling effect, the added N 2 gas acts in the same way as leveling agents used in electroplating, causing preferential adsorption at the edges of trenches and through-holes, 12) but there are still many points of uncertainty in this mechanism.…”