In order to enhance an etching rate using a conventional rf sputtering system, sputtering gases of fluoro-chloro-hydro-carbon were examined, the compositions of which were CF4, CCl2F2, CCl3F, CHCl2F, CHClF2, (CCl2F)2, CCl2FCClF2, and (CBrF2)2. Etching specimens were Si, quartz, glass, Al, Mo, stainless steel and photo resist. With the rf power density of 1.3 W/cm2 at the etching table, the etching rate of Si was ranged from 1000 to 2000 Å/min, which were ten to twenty times higher than that by argon. High etching rate is considered to be due the formation of volatile compounds on the surface of specimens. However, etching mechanism is not clarified in detail now. The effect of oxygen on the etching rate was also investigated, and it was found that the etching rate of Si did not decrease up to 12.5% in content of oxygen.

Filling of sub-µ m holes with a high aspect ratio by self-sputter deposition of copper is investigated. Good bottom coverages of 100% by means of thinner thin-film deposition and 50% by thicker thin-film deposition are attained. It is found that the bottom coverage decreases sharply when the ratio of the distance between the target and the substrate, D st, to the diameter of the erosion center ring is less than 1, and although the bottom coverage by the self-sputter deposition at lower pressures saturates at longer D st, that by the conventional sputter deposition at higher pressures decreases with D st. The bottom coverage also decreases with increases of the pressure, the thin film thickness deposited, and the radial distance of the substrate position from the target center toward the erosion center.

Articles you may be interested inEffect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

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Epitaxial Al(111) film was deposited on Si(111) by low-pressure chemical vapor deposition with the use of tri-isobutyl aluminum (TIBA) at the substrate temperature of 400°C with the deposition rete of 0.9 µm/min. It was necessary for epitaxy to preheat the TIBA gas just before the deposition on the substrate (gas-temperature controlling). The film surface was very smooth; reflectance was higher than 90%. Streaks were observed in RHEED patterns. The rocking curve measured by X-ray diffraction was very narrow. Analysis by SIMS showed the film contained about 0.1% of Si and 20 ppm of O, C, and H. No hillock appeared on the film after 430°C annealing for 40 min.