Growth of Al films by gas-temperature-controlled chemical vapor deposition

Kobayashi, Tsukasa; Sekiguchi, Atsushi; Akiyama, Naoto; Hosokawa, Naokichi; Asamaki, Tatsuo

doi:10.1116/1.578183

Cited by 22 publications

(4 citation statements)

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“…The electrode metal was chosen as aluminum, taking only the simplicity of the interface into account. Most metals, including Au, form a complex interface when deposited on a Si surface, whereas Al can be grown epitaxially on Si . To keep the computation affordable, we used a short molecular chain but made sure the interaction between end molecules is negligible…”

Section: Calculation Methodsmentioning

confidence: 99%

“…Our estimation of current, however, is expected to be valid at least for the order of magnitude. Since Al can be grown epitaxially on Si, it might be possible for experimentalists to build up nanoscale Al electrodes at the end of the π-stacking molecular chain on H/Si(100). If an assembly such as Al/styrene−NH 2 /Al on H/Si(100) can be realized, the current flowing through the wire at low bias will be significant enough to detect.…”

Section: Transport Propertiesmentioning

confidence: 99%

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Electron Transport in a π-Stacking Molecular Chain

et al. 2008

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We have investigated the electronic structure and transport properties of a pi-stacking molecular chain which is covalently bonded to a H/Si(100) surface, using the first-principles density functional theory approach combined with Green's function method. The highest occupied molecular orbital (HOMO) dispersion is remarkably reduced, but remains noticeable ( approximately 0.1 eV), when a short pi-stacking styrene wire is cut from an infinitely long wire and sandwiched between metal electrodes. We find that the styrene chain's HOMO and lowest unoccupied molecular orbital (LUMO) states are not separated from Si, indicating that it does not work as a wire. By substituting -NO2 or -NH2 for the top -H of styrene, we are able to shift the position of the HOMO and LUMO with respect to the Fermi level. More importantly, we find that the HOMO of styrene-NH2 falls into the band gap of the substrate and is localized in the pi-stacking chain, which is what we need for a wire to be electrically separated from the substrate. The conductance of such an assembly is comparable to that of Au/benzene dithiolate/Au wire based on chemical bonding, and its tunability makes it a promising system for a molecular device.

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Section: Calculation Methodsmentioning

confidence: 99%

Section: Transport Propertiesmentioning

confidence: 99%

Electron Transport in a π-Stacking Molecular Chain

et al. 2008

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“…The ratio TMS/(TMS + H2) is maintained at 0.i by following the method used by Kobayashi etal. 43 Initially, only H2 is admitted to the reactor at 40 sccm until the pressure reaches 40 retort by manually adjusting the throttle valve. Then the needle valve of the TMS line is opened gradually until the pressure rises to 44 mTorr.…”

Section: Methodsmentioning

confidence: 99%

Deposition of Fluorinated a ‐ SiC : H Films at Room Temperature

Kim

Lee

1994

J. Electrochem. Soc.

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A mixture of tetramethylsilane/CFJH2 is used for depositing fluorinated amorphous silicon carbide thin films at room temperature under heavy ion bombardment in a 13.56 MHz RF powered, asymmetric plasma reactor. An optical emission spectrometer and a quadrupole mass spectrometer are used to measure the concentrations of chemical species in the plasma phase while the bonding structure of the deposited films is analyzed by Fourier transform infrared spectroscopy (FTIR).The results indicate that the density and the optical properties of the films obtained at room temperature are as good as those deposited at much higher temperatures. The fluorination results in elimination of the bound hydrogen in the deposited film, decreases in the refractive index and extinction coefficient, an increase in the optical bandgap, and a decrease in the intrinsic stress of the film. Based on the gas-phase concentration measurements and the film bonding structures observed, growth mechanisms of the deposition are suggested.

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“…Some of the many uses of Al include applications in transportation, packaging, construction, and consumer durables. Thin layers of Al are usually deposited onto flat surfaces by physical vapor deposition (1), chemical vapor deposition (2) or a hot-dip coating process (3). Specifically, electrochemical deposition of Al at ambient temperature has attracted much interest for applications in corrosion-resistive coatings (4), decorative coatings (5), electro-refining processes (7) and Al-ion batteries (7).…”

Section: Introductionmentioning

confidence: 99%

The Effect of Brighteners on the Fabrication of Electroplated Bright Aluminum Films Using an AlCl₃-EMIC-Toluene Bath

Uehara¹,

Gunji²,

Tanabe³

et al. 2015

ECS Trans.

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The effect of brighteners such as 4-pyridinecarboxylic acid hydrazide (4-PCAH), 3-pyridinecarboxylic acid hydrazide (3-PCAH), 2-pyridinecarboxylic acid hydrazide (2-PCAH) and conventional 1,10-phenanthroline (PH) on the electrodeposition efficiency and brightness of aluminum (Al) was investigated. Electrodeposited Al films were prepared with constant currents in an aluminum chloride (AlCl3)-ethyl-3-methylimidazolium chloride (EMIC)-toluene bath, and the results were compared using a scanning electron microscope (SEM) and UV-vis spectrometer. Among the four brighteners used in this study, 4-PCAH exhibited the highest brightness on the electrodeposited Al surfaces.

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Growth of Al films by gas-temperature-controlled chemical vapor deposition

Abstract: Articles you may be interested inEffect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

Cited by 22 publications

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Electron Transport in a π-Stacking Molecular Chain

Electron Transport in a π-Stacking Molecular Chain

Deposition of Fluorinated a ‐ SiC : H Films at Room Temperature

The Effect of Brighteners on the Fabrication of Electroplated Bright Aluminum Films Using an AlCl₃-EMIC-Toluene Bath

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Growth of Al films by gas-temperature-controlled chemical vapor deposition

Abstract: Articles you may be interested inEffect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

Cited by 22 publications

References 0 publications

Electron Transport in a π-Stacking Molecular Chain

Electron Transport in a π-Stacking Molecular Chain

Deposition of Fluorinated a ‐ SiC : H Films at Room Temperature

The Effect of Brighteners on the Fabrication of Electroplated Bright Aluminum Films Using an AlCl3-EMIC-Toluene Bath

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Product

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The Effect of Brighteners on the Fabrication of Electroplated Bright Aluminum Films Using an AlCl₃-EMIC-Toluene Bath