2009
DOI: 10.1016/j.nimb.2009.06.059
|View full text |Cite
|
Sign up to set email alerts
|

Film growth by polyatomic C2H5+ bombarding a diamond (100) surfaces: Molecular dynamics study

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2010
2010
2014
2014

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 20 publications
0
1
0
Order By: Relevance
“…In the work of Quan et al [21], a similar linear relationship was found between hydrogen content in the film and in the source by simulating the growth of a-C:H films from CH radicals. Lu et al [22] investigated the deposition process of polyatomic C 2 H 5 + ions on diamond (100) surfaces, showing that with increasing incident energy the ratio of C/H increased and a transition from sp 3 -rich to sp 2 -rich film was observed. Wang et al [10] studied the role of CH 4 /Ar ratio in source gas in hydrogen content, sp 3 /sp 2 ratio and microstructure of a-C:H films.…”
Section: Introductionmentioning
confidence: 99%
“…In the work of Quan et al [21], a similar linear relationship was found between hydrogen content in the film and in the source by simulating the growth of a-C:H films from CH radicals. Lu et al [22] investigated the deposition process of polyatomic C 2 H 5 + ions on diamond (100) surfaces, showing that with increasing incident energy the ratio of C/H increased and a transition from sp 3 -rich to sp 2 -rich film was observed. Wang et al [10] studied the role of CH 4 /Ar ratio in source gas in hydrogen content, sp 3 /sp 2 ratio and microstructure of a-C:H films.…”
Section: Introductionmentioning
confidence: 99%