First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Razeghi, Manijeh; Defour, M.; Blondeau, R.; Omnès, Franck; Maurel, P.; Acher, O.; Brillouet, F.; C‐Fan, J. C.; Salerno, J. P.

doi:10.1063/1.100239

Cited by 121 publications

(34 citation statements)

References 4 publications

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“…Besides bonding based integration methods [1], [2], which have been very successful in demonstrating a wide range of functional diversity and good device performance, epitaxial growth of III-Vs on silicon recently regained interest both for material science and optical engineering [3]- [5]. Despite the large lattice mismatch between silicon and typical III-V materials, considerable improvements in both material quality and device performance were achieved through technologies such as lattice-matched growth [6], [7], the use of a self-organized dislocation network [8], [9], lateral epitaxial overgrowth [10] or quantum dot epitaxy [11], [12].…”

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confidence: 99%

Design of a Novel Micro-Laser Formed by Monolithic Integration of a III-V Pillar With a Silicon Photonic Crystal Cavity

Wang

Tian

Thourhout

2013

J. Lightwave Technol.

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Abstract-A novel micro-laser configuration formed by integrating an InGaAs/InP pillar with a silicon photonic crystal cavity is proposed and analyzed in detail. Special attention is paid to designing the cavity such that it can accommodate large-size pillars without performance compromise. The Purcell effect is studied and predicted to be significant because of the close interaction between the cavity modes and the gain medium. An overall quality factor as high as 1 and a spontaneous emission factor close to unity are predicted. Possible limiting factors for laser performance, such as surface non-radiative recombination and the thermal dissipation properties are analyzed, and it is found that the proposed laser design is very robust. This comprehensive analysis suggests that the proposed micro-laser is a promising candidate for large-scale integration of micro-lasers on silicon for low power consumption applications, such as intra-chip optical communications.

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mentioning

confidence: 99%

Design of a Novel Micro-Laser Formed by Monolithic Integration of a III-V Pillar With a Silicon Photonic Crystal Cavity

Wang

Tian

Thourhout

2013

J. Lightwave Technol.

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“…There have been very few reports on the direct growth of InP-based optical devices on silicon. The first InP-based laser integrated on Si has been demonstrated by Razeghi et al [11]. In addition, Kataria et al [12] reported InGaAsP/InP quantum-wells grown on ELOG of InP on Si.…”

Section: Inalgaas/inalas Mqws On Si Substrate I Introductionmentioning

confidence: 96%

InAlGaAs/InAlAs MQWs on Si Substrate

Shi

Wan

et al. 2015

IEEE Photon. Technol. Lett.

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Abstract-We report the growth and characterization of InAlGaAs/InAlAs multiquantum wells (MQWs) emitting at ∼1310-nm grown on silicon by organometallic vapor phase epitaxy. Compared with the same structure grown on a reference planar InP substrate, photoluminescence of the MQWs on Si shows both comparable line widths and internal quantum efficiencies at room temperature. A specially engineered InP buffer with interlayers on a nanopatterned silicon substrate was used. Cross-sectional transmission electron microscopy reveals effective dislocation filtering by the three strained InGaAs interlayers. The high-quality quantum-well structure grown on the InP-on-Si template suggests great potential of integrating III-V photonic devices on the Si platform.Index Terms-InAlGaAs/InAlAs multi-quantum wells, organometallic vapor phase epitaxy, photoluminescence, InP-on-Si.

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“…A direct gap transition from Ge-on-Si was also reported [20] and its CW operation under optical pumping was demonstrated at room temperature [21]. The RT-CW operation of injection-type III-V semiconductor lasers on Si substrates prepared by means of epitaxial growth and a wafer direct bonding method [22] were reported in the 1980s and 1990s at a wavelength of 1.3 [23] and 1.55 μm [24]. Recently, long wavelength lasers grown on Si substrates were developed using GaSb [25] and Ga(NAsP) [26] compound semiconductors.…”

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confidence: 97%

GaInAsP/InP Membrane Lasers for Optical Interconnects

Arai

Nishiyama

Minamikawa

et al. 2011

IEEE J. Select. Topics Quantum Electron.

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Abstract-In this paper, the state-of-the art of long-wavelength GaInAsP/InP membrane semiconductor lasers, one of the most promising candidate light sources for optical interconnects and on-chip optical wiring between large-scale integrated circuits, is described. After an extensive review of research activities focused on laser preparation on either Si or Si-on-insulator substrate, the findings of our recent research activities on low power consumption lasers are presented. Specifically, our interest was set on the low-damage fabrication of strongly index-coupled grating, which is generally opted forDFB and distributed reflector (DR) lasers consisting of wire-like active regions, as well as of high index-contrast membrane waveguides. A submilliampere threshold current and a differential quantum efficiency close to 50% from the front facet were achieved in the case of the DR laser. On the other hand, a lateral current injection (LCI) structure, which can be combined with the membrane laser, was adopted for the realization of an injection-type membrane laser. The successful continuous wave operation of LCI lasers, prepared on a semiinsulating InP substrate, was achieved with moderately low threshold current at room temperature.Index Terms-DFB laser, distributed reflector (DR) laser, GaInAsP/InP, optical interconnect, optical wiring, semiconductor laser, single-mode laser, Si-on-insulator (SOI) circuits, III-V materials.

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First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Cited by 121 publications

References 4 publications

Design of a Novel Micro-Laser Formed by Monolithic Integration of a III-V Pillar With a Silicon Photonic Crystal Cavity

Design of a Novel Micro-Laser Formed by Monolithic Integration of a III-V Pillar With a Silicon Photonic Crystal Cavity

InAlGaAs/InAlAs MQWs on Si Substrate

GaInAsP/InP Membrane Lasers for Optical Interconnects

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