2005
DOI: 10.1109/mdt.2005.138
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First-Order Performance Prediction of Cache Memory with Wafer-Level3D Integration

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Cited by 44 publications
(14 citation statements)
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“…Besides the benefits of interconnect performance [5,6], this scheme leads to increased transistor packing density, smaller chip area, lower power dissipation, and provides means to integrate dissimilar technologies (digital, analog, RF circuits, etc) in the same chip, but on different active layers. Alongside research into developing processing technology for 3-D ICs [5,7], several works in the literature have explored possible applications for this revolutionary technology [5,7,8,9]. One of the most promising applications is that of integrating a processor-andmemory system on a single 3-D chip.…”
Section: Introductionmentioning
confidence: 99%
“…Besides the benefits of interconnect performance [5,6], this scheme leads to increased transistor packing density, smaller chip area, lower power dissipation, and provides means to integrate dissimilar technologies (digital, analog, RF circuits, etc) in the same chip, but on different active layers. Alongside research into developing processing technology for 3-D ICs [5,7], several works in the literature have explored possible applications for this revolutionary technology [5,7,8,9]. One of the most promising applications is that of integrating a processor-andmemory system on a single 3-D chip.…”
Section: Introductionmentioning
confidence: 99%
“…The method of using Elmore delay model is suitable to estimate interconnect performance at the early stages of design flow where all the TABLE IV ARCHITECTURE CONFIGURATIONS FOR GRAPHITE SIMULATOR TABLE V BENCHMARK PROGRAMS IN THREE TEST PROGRAM SUITS logics are not synthesized yet, because the design tools for the TSV and the 3-D technology we used are not publicly available. The same method was already used and verified in [66] and [75] for estimating interconnect performance of 3-D ICs. Especially in [75], delay estimation using the firstorder Elmore model for 3-D cache memory has been validated by the Cadence Spectre [76] simulation of a four-way 18-Mb Intel SRAM cache at the 180-nm technology node, achieving an accuracy within 10% of the Cadence simulation result.…”
Section: Methodsmentioning
confidence: 99%
“…The same method was already used and verified in [66] and [75] for estimating interconnect performance of 3-D ICs. Especially in [75], delay estimation using the firstorder Elmore model for 3-D cache memory has been validated by the Cadence Spectre [76] simulation of a four-way 18-Mb Intel SRAM cache at the 180-nm technology node, achieving an accuracy within 10% of the Cadence simulation result. To estimate interconnect power, we used analytical models proposed in [77].…”
Section: Methodsmentioning
confidence: 99%
“…Many different uses of 3-D integration have been proposed, from stacking additional memory or extra levels of cache [10,34,43,24,47,20,19] to stacking multiple processors [6]. These two examples exploit the full advantages of 3-D chips, as attaching additional memory can provide lower latency compared to off-chip memory, and power can be saved because driving TSVs requires less power than long off-chip wires.…”
Section: Applications Of 3-d Integrationmentioning
confidence: 99%