First-principles study on structural stability and electronic properties of GaAs nanowire undergoing surface oxidization

Diao, Yu; Liu, Lei; Xia, Sihao

doi:10.1016/j.apsusc.2019.144231

Cited by 14 publications

(1 citation statement)

References 31 publications

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“…In contrast, the Ga surface is readily transformed into a substantially more stable configuration of HO-GaN-H (figure 5(b)). Furthermore, oxidation could significantly affect the electronic properties [108], altering the material from GaN nanosheets into a new GaNO compound, which remains a direct band semiconductor similar to GaN nanosheets. The conclusion indicates that the properties of GaN nanosheets can be manipulated by oxidation at the Ga surface and provide guidance for the stability of GaN nanosheet-based devices when operating in an O atmosphere [68].…”

Section: Gas Adsorptionmentioning

confidence: 99%

Recent progress in III-nitride nanosheets: properties, materials and applications

Huang

Wang

et al. 2021

Semicond. Sci. Technol.

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As compared with their bulk materials, III-nitride nanosheets, including gallium nitride, aluminium nitride, indium nitride, reveal wider bandgap, enhanced optical properties, anomalously temperature-dependent thermal conductivity, etc, which are more suitable for the fabrication of nano-photodetectors, nano-field electron transistors, etc, for the application in the fields of nano-optoelectronics and nano-electronics. Although the properties of III-nitrides have been predicted based on the first-principles calculation, the experimental realization of III-nitride nanosheets has been restricted primarily due to dangling bonds on the surface and strong built-in electrostatic field caused by wurtzite/zinc-blende structures. To tackle these issues, several effective approaches have been introduced, and the distinct progress has been achieved during the past decade. In this review, the simulation and prediction of properties of III-nitride nanosheets are outlined, and the corresponding solutions and novel developed techniques for realisation of III-nitride nanosheets and defect control are discussed in depth. Furthermore, the corresponding devices based on the as-grown III-nitride nanosheets are introduced accordingly. Moreover, perspectives toward the further development of III-nitrides nanosheets and devices are also discussed.

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Section: Gas Adsorptionmentioning

confidence: 99%