Intrinsic point defects in pristine and Zn-doped GaAs nanowire surfaces: A first-principles investigation

Liu, Lei; Diao, Yu; Xia, Sihao

doi:10.1016/j.apsusc.2020.145906

Cited by 6 publications

(1 citation statement)

References 35 publications

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“…First, this is consistent with two orders of magnitude diffusion enhancement in Si NWs compared to bulk Si [18]. Second, NWs have twins [48,49] and intrinsic defects [50] from the growth, and during any subsequent annealing additional defects such as column III antisites, column III interstitials and As vacancies [51] are expected. These defects might cause enhanced dopant diffusion.…”

Section: Discussionsupporting

confidence: 74%

In situ off-axis electron holography of real-time dopant diffusion in GaAs nanowires

et al. 2022

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Off-axis electron holography was used to reveal remote doping in GaAs nanowires occurring during in-situ annealing in a TEM. Dynamic changes to the electrostatic potential caused by carbon dopant diffusion upon annealing were measured across GaAs nanowires with radial p-p+ core-shell junctions. Electrostatic potential profiles were extracted from holographic phase maps and built-in potentials (Vbi) and depletion layer widths (DLWs) were estimated as function of temperature over 300-873 K. Simulations in absence of remote doping predict a significant increase of Vbi and DLWs with temperature. In contrast, we measured experimentally a nearly constant Vbi and a weak increase of DLWs. Moreover, we observed the appearance of a depression in the potential profile of the core upon annealing. We attribute these deviations from the predicted behavior to carbon diffusion from the shell to the core through the nanowire sidewalls, i.e. to remote doping, becoming significant at 673 K. The DLW in the p and p+ regions are in the 10-30 nm range.

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