2003
DOI: 10.1049/el:20031075
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Five-contact silicon structure based integrated 3D Hall sensor

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Cited by 10 publications
(4 citation statements)
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“…In addition, some designs use in‐plane Hall sensors and instrumentation amplifiers to obtain all components of the magnetic field. [ 44 ]…”
Section: Mmg Sensing Technologiesmentioning
confidence: 99%
See 1 more Smart Citation
“…In addition, some designs use in‐plane Hall sensors and instrumentation amplifiers to obtain all components of the magnetic field. [ 44 ]…”
Section: Mmg Sensing Technologiesmentioning
confidence: 99%
“…[33,34] Parameter and instrumentation amplifiers to obtain all components of the magnetic field. [44] A second broad categorization of magnetic sensors considers whether the magnetic field causes electrons to move through various layers of semiconductor material within the sensor, the so-called magneto-transport effect. Examples of technologies that benefit from the magneto-transport phenomenon include Hall probes and magneto-resistive, -electric and -impedance sensors.…”
Section: Mmg Sensing Technologiesmentioning
confidence: 99%
“…Detailed information is displayed in Table 4 . The sensitivities in the horizontal and vertical directions cannot be optimized simultaneously due to the opposite demands on the active region [ 13 ]. Though a balanced performance is achieved [ 14 , 15 , 16 ], there is a compromise in one of sensitivities in the horizontal and vertical directions.…”
Section: Improvement Of the Cross-shaped 3d Hall Devicementioning
confidence: 99%
“…To solve these problems, horizontal and vertical Hall devices were integrated into the same chip [ 7 , 8 , 9 , 10 , 11 , 12 ]. Besides this, in virtue of different biases, a single device can be also used for the measurement [ 13 , 14 , 15 , 16 ]. Current-related sensitivity ( S I ), a main performance parameter of Hall sensors, is related to the doping concentration of the active region and the thickness parallel to the magnetic field.…”
Section: Introductionmentioning
confidence: 99%