Fixed-tuned submillimeter wavelength waveguide mixers using planar Schottky-barrier diodes

Hesler, Jeffrey L.; Hall, W. R.; Crowe, T.W.; Weikle, Robert M.; Deaver, Bascom S.; Bradley, Richard F.; Pan, S. K.

doi:10.1109/22.575581

Cited by 80 publications

(34 citation statements)

References 10 publications

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“…Since the product ffiffiffiffi ffi P s p Â ffiffiffiffiffiffiffi ffi P LO p at the optimum condition was comparable to the minimum detectable signal power in the square-law detection mode (3 Â 10 À12 W), the mixing operation of the FMB diode was considered to be quite efficient even under the zero-biased condition. More importantly, the optimum P LO obtained here is about three to four orders of magnitude lower than those reported by the zero-biased SBD mixers at room temperature [1,3,6,7]. This large improvement is attributed to the large output current capability of the FMB diode under the zero-biased condition.…”

Section: Resultsmentioning

confidence: 48%

“…It has already realized noise equivalent powers (NEPs) more than two orders of magnitude lower than those obtained by the square-law detection of the SBD in the THz-wave range [2]. However, the SBD usually requires biasing or relatively large local oscillator (LO) input power for obtaining better noise characteristics [1,3,5,6,7] because of its relatively large barrier height. Recently, we developed a novel InP/InGaAs hetero-barrier rectifier, called a Fermi-level managed barrier (FMB) diode [8,9], to overcome the constraints associated with the Schottky barrier.…”

Section: Introductionmentioning

confidence: 99%

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Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode

Itô

Ishibashi

2017

IEICE Electron. Express

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Section: Resultsmentioning

confidence: 48%

Section: Introductionmentioning

confidence: 99%

Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode

Itô

Ishibashi

2017

IEICE Electron. Express

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“…In 1997, with discrete planar diodes soldered to a quartz microstrip circuit, excellent performance was obtained with mixers, within a factor of 1.5 of the best whisker-contacted Schottky diode mixers. 18 However, it is difficult to scale this approach to higher frequencies due to the requirement of precise alignment of the diode chip to the surrounding circuit. In 2000, a novel wafer bonding process was used to integrate high quality GaAs devices on quartz substrates.…”

Section: 6 Thz Frequency Upconverter Circuit and Block Fabricationmentioning

confidence: 99%

1.6-THz frequency upconverter with integrated GaAs diode circuit

Schoenthal

Hesler

et al. 2005

SPIE Proceedings

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THz frequency sources have a variety of applications ranging from molecular spectroscopy, atmospheric remote sensing, scaled radar range systems, sensing and monitoring of chemical and biological molecules to wireless communications. However, there is a lack of frequency tunable sources at these wavelengths. A frequency upconverter can be used to generate frequency tunable sidebands as a tunable high frequency source from a fixed source, such as Far Infrared (FIR) Laser. The development of 1.6 THz frequency upconverters with integrated diode circuit are described in this paper. The integration of the diode with the embedding circuit enhances mechanical robustness and makes the circuits easy to handle compared with a whisker-contacted diode structure. A nonlinear analysis is used to determine the optimum varactor diode parameters. Through the optimization, the circuit quartz substrate thickness is chosen to be 10 um and the anode diameter is determined to be 1 um. With the non-ohmic cathode contact technique and air bridge process (eliminating the surface channel etch process), the 1.6 THz integrated circuits were fabricated in University of Virginia with high yield. Furthermore, the conversion loss is measured and presented. The test setup consists of an FIR Laser, beam splitter, polarizer, parabolic mirror, silicon etalon and other optical components. The average conversion loss was measured to be approximatly 25 dB over 8 GHz microwave pump. Equivalent circuit models and simulations are presented to corroborate these results.

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“…Thanks to the improvement of 3D electromagnetic solvers and nonlinear circuit simulators, fixedtuned SHP mixers using discrete or integrated planar Schottky diodes have already demonstrated lower conversion loss than traditional mixers using mechanically tunable backshorts [14]. The discrete planar diode can be used for low conversion loss fixed-tuned mixers while providing significant cost reduction, up to 600 GHz [15].…”

Section: Mixer Designmentioning

confidence: 99%

380 GHZ Sub-Harmonically Pumped Mixer Based on Anti-Parallel Planar Schottky Diode

Yang¹,

Wang²,

Wang³

et al. 2014

PIER Letters

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Abstract-This paper presents the design and fabrication of a feed horn antenna integrated fix-tuned 380 GHz sub-harmonically pumped mixer, based on planar GaAs air-bridged Schottky anti-parallel diode from Rutherford Appleton Laboratory. The diode was designed and fabricated by millimeter technology group, Rutherford Appleton Laboratory, UK. The mixer's circuit configuration and cavity block are realized by joint simulation of ANSOFT's three-dimensional full-wave electromagnetic simulation software HFSS and AGILENT's circuit simulation software ADS. The mixer circuit is fully integrated with the microstrip circuit and the flip-chipped diode on suspended 50 µm thick quartz substrate, and whole fixed-tuned mixer cavity block is integrated with RF feed horn antenna, using least parts to minimize the cost, as well as maximize its potential convenience for circuit and block manufacture. The simulation and test investigation have good agreement and show state-of-the-art results. The experimental results show that over an IF band of 2.5-3.5 GHz, the mixer's conversion loss is lower than 10 dB with mean value 9 dB, and the mixer's equivalent noise temperature is less than 3000 K with mean value 2000 K. Besides, mixer equivalent noise temperature curve's variation trends show good consistency with conversion loss curve.

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Fixed-tuned submillimeter wavelength waveguide mixers using planar Schottky-barrier diodes

Cited by 80 publications

References 10 publications

Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode

Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode

1.6-THz frequency upconverter with integrated GaAs diode circuit

380 GHZ Sub-Harmonically Pumped Mixer Based on Anti-Parallel Planar Schottky Diode

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