Flash Memories

Cappelletti, Paulo; Golla, Carla; Olivo, P.; Zanoni, Enrico

doi:10.1007/978-1-4615-5015-0

Cited by 246 publications

(201 citation statements)

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“…Advanced flash memory technology can store more than 1 bit in each flash memory cell, making it possible to increase the memory density further without reducing the cell size. The stored charges are located in the potential well of blocking (or sometimes called control oxide) and tunnelling oxide layers, so the information can be maintained even after the power outage, resulting in nonvolatile memory operations [19][20][21]. This is the major technical advancement that has been made since the invention of flash memory devices using the floating gate.…”

Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

“…In addition, nonvolatility is important since high-performance and high-density non-volatile memory devices should be integrated with consumer electronic devices (for example, mobile phones, digital cameras, potable media players, laptop computers, etc.). Therefore, tremendous effort has been made toward the development of high-density, low-cost, and nonvolatile solid-state storage devices [17][18][19][20][21][22][23][24][25][26][27][28]. Among the many types of non-volatile memory technology, flash memory devices based on the floating gate have been widely used due to their massive memory capacity, which has been required for many applications [17,[19][20][21]23].…”

Section: Introductionmentioning

confidence: 99%

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Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

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“…6 To develop a similar error correction scheme in RRAM, we must find a simple and easily-accessible physical phenomena that can predict the error signals reliably.…”

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confidence: 99%

Predictability of reset switching voltages in unipolar resistance switching

Lee

Chae

Chang

et al. 2009

Applied Physics Letters

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In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current I R , can be scaled to the nonlinear coefficient B o of the I-V curves, i.e., I R ∝ B o -x . This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO 2 and FeO y capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations. a) Electronic mail: twnoh@snu.ac.kr.

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“…The erase operation is expensive and should be delayed as much as possible. This model arises, in practice, in the context of flash memories and similar storage devices that use an isolated charge in order to record data [1]. Different processes (e.g.…”

Section: Introductionmentioning

confidence: 99%

Buffer Coding for Asymmetric Multi-Level Memory

Bohossian

Jiang

Bruck

2007

2007 IEEE International Symposium on Information Theory

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Abstract-Certain storage media such as flash memories use write-asymmetric, multi-level storage elements. In such media, data is stored in a multi-level memory cell the contents of which can only be increased, or reset. The reset operation is expensive and should be delayed as much as possible. Mathematically, we consider the problem of writing a binary sequence into writeasymmetric q-ary cells, while recording the last r bits written. We want to maximize t, the number of possible writes, before a reset is needed. We introduce the term Buffer Code, to describe the solution to this problem. A buffer code is a code that remembers the r most recent values of a variable. We present the construction of a single-cell (n -1) buffer code that can store a binary (1 = 2) variable with t = PL '? 1 J + r -2 and a universal upper bound to the number of rewrites that a single-cell buffer code can have: t < qL1 j r+ [log,{[(q-1) mod (lr-1)]+1}1. We also show a binary buffer code with arbitrary n, q, r, namely, the code uses n q-ary cells to remember the r most recent values of one binary variable.The code can rewrite the variable t = (q -1) (n -2r + 1) + r -1 times, which is asymptotically optimal in q and n. We then extend the code construction for the case r = 2, and obtain a code that can rewrite the variable t = (q-1) (n-2) + 1 times. When q = 2, the code is strictly optimal.

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Flash Memories

Cited by 246 publications

References 0 publications

Recent progress in gold nanoparticle-based non-volatile memory devices

Recent progress in gold nanoparticle-based non-volatile memory devices

Predictability of reset switching voltages in unipolar resistance switching

Buffer Coding for Asymmetric Multi-Level Memory

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