Flashlamp pumping of erbium‐doped silicon nanoclusters

Abstract

We report recent results showing broad-band excitation of erbium ions implanted into thin films of silica containing silicon nanoclusters. Indirect excitation of the rare-earth ions is mediated by the nanoclusters, which are either grown in during plasma-enhanced chemical vapour deposition of the films, or are formed by implantation of thermally grown SiO 2 layers with Si ions. We demonstrate efficient flashlamp pumping of the erbium 1535 mm photoluminescence band and discuss the device implications of this material.