Flat-top flash annealing&amp;#x2122; for advanced CMOS processing

Timans, P. J.; Xing, G. C.; Hamm, Silke; McCoy, S.; Cibere, J.; Stuart, G.C.; Camm, D. M.

doi:10.1109/iwjt.2012.6212811

Cited by 7 publications

(3 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The processes of thermal treatment are an integral part of the micro-and nanoelectronics technology. A lamp-based chamber is one of the main units of the rapid treatment equipment that is widely used at present time for thermal processes including a post-implantation annealing [1] [2], diffuse doping [3] [4], crystallization of amorphous films [5] [6], contact annealing [7] [8], oxidation [9] [10] and etc. Thermal treatment processes differ in duration and radiation power from parts per million of second and peak power until 100 MW on flesh-annealing [3] [4] to tens of seconds and radiation power ~0.1 kW on low-temperature annealing [11].…”

Section: Introductionmentioning

confidence: 99%

“…The model of the thermal chamber usually used in thermal simulation includes three plates: a heater plate, a working plate (wafer) and the absorber plate [14]. The quartz window influence, as a rule, is considered by restriction of the spectral interval for the heater emission in the spectral range from 0.4 to 4.0 µm [1] [15]. However, functions of the quartz window in the thermal system Journal of Materials Science and Chemical Engineering which models the lamp-based chamber extend further.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Effect of Quartz Window on Bistability of the Silicon Wafer in Lamp-Based Reactor

Prigara¹,

Kupriyanov²,

Ovcharov³

2020

MSCE

View full text Add to dashboard Cite

The effect of a quartz plate (window) on the silicon wafer temperature is studied in the conditions of the combined thermal transfer in a lamp-based chamber for the rapid thermal treatment (RTP) set up. The chamber for RTP is simulated by a radiative-closed thermal system including the influence of quartz window as a spectral filter of lamp emission and a source of emitted thermal radiation. Energy equations for thermal fluxes involved in the heat input and output from the working wafer and quartz window are solved in spectral approximation. The transfer characteristics that are defined by the temperature dependencies of the silicon wafer and the quartz window on the temperature of the heater are accounted. It is shown that temperature bistability in the silicon wafer initiates an induced bistability into the quartz window that does not reveal bistable behavior because of the linear temperature dependence of its total optical characteristics. A possibility for simulation of the quartz window by spectral restriction of the heater radiation is confirmed. The availability of the weak bistable effect in the mode of zero effective heat exchange coefficient of a non-radiative component of the thermal flux removed from the working wafer has been obtained.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Effect of Quartz Window on Bistability of the Silicon Wafer in Lamp-Based Reactor

Prigara¹,

Kupriyanov²,

Ovcharov³

2020

MSCE

View full text Add to dashboard Cite

show abstract

“…Thermal budgets are low because of the need to prevent unnecessary phase transition, strain relaxation and defect formation as well as limit atomic diffusion (2). Alloy materials for emerging memory applications also require very low thermal budgets for TiN or other metal liner deposition.…”

Section: Introductionmentioning

confidence: 99%