Flexible High‐Performance All‐Inkjet‐Printed Inverters: Organo‐Compatible and Stable Interface Engineering

Chung, Seungjun; Jang, Mi; Ji, Seon-Beom; Im, Hwarim; Seong, Narkhyeon; Ha, Jewook; Kwon, Soon‐Ki; Kim, Yun‐Hi; Yang, Hoichang; Hong, Yongtaek

doi:10.1002/adma.201301040

Cited by 58 publications

(63 citation statements)

References 41 publications

(44 reference statements)

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“…To extend applicability of CONNECT to form low-cost, fully solution-processed organic electronics, inkjet-printed silver electrodes were used as bridging electrodes. Inkjet printing is a low-cost method of fabricating TFTs, but the channel spacing is limited to 15-to 20-μm resolution (57,58). Fig.…”

Section: Resultsmentioning

confidence: 99%

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Park

Giri

Shaw

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost largearea electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed "controlled OSC nucleation and extension for circuits" (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit halfadder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication.organic semiconductors | patterning | small molecules | transistors | circuits

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Section: Resultsmentioning

confidence: 99%

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Park

Giri

Shaw

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

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“…To relieve the issues of energetic mismatch and surface energy mismatch, SAMs are used on both the contacts and the dielectric to enhance the semiconductor adhesion and reduce contact resistance . Research done by the Hong group has developed a method in which a thin layer (≈4 nm) of dimethylchlorosilane‐terminated polystyrene (PS‐Si(CH3)2Cl) is applied to the entire device before semiconductor deposition, resulting in smooth application and crystal growth of inkjet printed semiconductor layers across the device for Ag‐nanoparticle and PEDOT:PSS contacts …”

Section: Printed Contacts In Ofet Devicesmentioning

confidence: 99%

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Waldrip

Jurchescu

Gundlach

et al. 2019

Adv Funct Materials

238

261

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Organic semiconductors have sparked interest as flexible, solution processable, and chemically tunable electronic materials. Improvements in charge carrier mobility put organic semiconductors in a competitive position for incorporation in a variety of (opto-)electronic applications. One example is the organic field-effect transistor (OFET), which is the fundamental building block of many applications based on organic semiconductors. While the semiconductor performance improvements opened up the possibilities for applying organic materials as active components in fast switching electrical devices, the ability to make good electrical contact hinders further development of deployable electronics. Additionally, inefficient contacts represent serious bottlenecks in identifying new electronic materials by inhibiting access to their intrinsic properties or providing misleading information. Recent work focused on the relationships of contact resistance with device architecture, applied voltage, metal and dielectric interfaces, has led to a steady reduction in contact resistance in OFETs. While impressive progress was made, contact resistance is still above the limits necessary to drive devices at the speed required for many active electronic components. Here, the origins of contact resistance and recent improvement in organic transistors are presented, with emphasis on the electric field and geometric considerations of charge injection in OFETs.semiconductors with superior intrinsic charge transport properties, there is a stringent need to improve the device properties in order to allow organic devices to fulfill their technological prospectives. In the organic semiconductor community, contact resistance (R C ) has come under increased scrutiny as it is apparent that the final device performance is often domi nated by carrier injection, rather than the transport through the semiconductor layer. Contact resistance can impact OFET development in multiple ways. First, if not accounted for, a high contact resistance may lead to inaccurate extraction of the device parameters. Second, any inaccuracies in parameter extraction can have significant consequences on material development, from generating incorrect structure-property relationships to discarding organic semiconductors whose efficient intrinsic electrical properties have been masked by inefficient contacts. Beyond OFET and semiconductor characterization, analog, low power, and high frequency applications require a greater level of device parameter control than has been obtained in typical DC, high-voltage OFETs. For analog applications, e.g., integration of conditioning circuits such as local sense amps for distributed flexible sensor arrays, nonlinearity of the transistor response inhibits proper functioning and limits applicability of common models used to design circuitry. Low power device development for novel materials are hindered by the high voltage turn-on and current suppression in devices with large R C . Considering high-frequency applications, Klauk suggest...

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“…Additionally, the mobility evaluated from the ideal equations is incorrect and thus does not reflect the intrinsic transport properties of materials . Although DOS of the organic semiconductor could be broadened to reduce the injection barriers, poor contact injections are still typical for OFETs for the reasons summarized in Figure a, and a series of methods, e.g., using a self‐assembled monolayer to treat metal electrodes and inserting a charge injection layer, have been previously reviewed by Noh and coworkers in 2015. In the following sections, we will briefly discuss the latest methods and mechanisms to engineer contact injection.…”

Section: Optimization Of Nonideal Ofetsmentioning

confidence: 99%

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

Yang

Dai

et al. 2019

Adv Funct Materials

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Many advanced materials have been developed for organic field-effect transistors (OFETs) or thin-film transistors (TFTs) based on organic and organic hybrid materials. However, although many new OFETs exhibit superior characteristic parameters (such as high mobility), most of them show nonideal performances that have strongly limited progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. In this review, the device physics of ideal and nonideal OFETs is discussed first to understand the factors that limit effective mobility in semiconducting channels, distort the potential distribution, or reduce the drift electric field. Then, recent advances in optimizing the material combinations, device structures, and fabrications of OFETs toward ideal transistors are discussed. Based on the good control of materials and interfaces, some new and novel concepts to utilize the nonideal properties of OFETs to build low-power circuits and integrated sensors are also discussed.

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Flexible High‐Performance All‐Inkjet‐Printed Inverters: Organo‐Compatible and Stable Interface Engineering

Cited by 58 publications

References 41 publications

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier

Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors

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