Flexible radio-frequency single-crystal germanium switch on plastic substrates

Qin, Guoxuan; Cai, Tianhao; Yuan, Hao-Chih; Seo, Jung‐Hun; Ma, Jan; Ma, Zhenqiang

doi:10.1063/1.4872256

Cited by 16 publications

(5 citation statements)

References 19 publications

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“…Using extrapolation of U and |h 21 | 2 with a -20 dB/dec roll-off yields method, which shows the cut off frequency f T = 395 GHz, the maximum oscillation frequency f MAX = 630 GHz The RF performance f T and f MAX of the flexible substrate InP DHBT device in this paper are compared with the performance of other flexible transistors reported previously in Refs. [13,15,17,18,[24][25][26][27], as shown in Table 1. Our work shows the highest RF frequency performance of flexible devices to date, besides confirms the potential of flexible substrate InP DHBT for high frequency applications.…”

Section: Resultsmentioning

confidence: 99%

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Wu¹,

Dai²,

Kong³

et al. 2022

J. Semicond.

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This letter presents the fabrication of InP double heterojunction bipolar transistors (DHBTs) on a 3-inch flexible substrate with various thickness values of the benzocyclobutene (BCB) adhesive bonding layer, the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and calculated. InP DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f T = 358 GHz and maximum oscillation frequency f MAX = 530 GHz. Moreover, the frequency performance of the InP DHBT on flexible substrates at different bending radii are compared. It is shown that the bending strain has little effect on the frequency characteristics (less than 8.5%), and these bending tests prove that InP DHBT has feasible flexibility.

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Section: Resultsmentioning

confidence: 99%

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Wu¹,

Dai²,

Kong³

et al. 2022

J. Semicond.

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“…Flexible RF switches based on transfer-printed Si and Ge NMs with simple circuits structure as shown in Figure 9a have been demonstrated on plastic substrates. [155,249,250] The flexible RF switches share the same fabrication methodology as the flexible microwave transistors made on NMs, [69] where ion implantation and thermal annealing procedures were carried on rigid SOI or Ge-on-insulator substrates to circumvent incompatibility with plastic substrates. The sub-micrometer thick of NM enabled lateral PIN diodes and single-pole single-throw (SPST) switches realized by forming electrodes and interconnect metal using conventional planar fabrication techniques.…”

Section: Circuit-last Approachmentioning

confidence: 99%

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Zhang

Lan

Qiu

et al. 2020

Adv Materials Technologies

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2000759 (6 of 38) www.advmattechnol.de Figure 4. Flexible microwave transistors. a) Schematic illustration of fabrication process flow of flexible microwave TFTs based on Si nanomembrane. Left, two-step transfer-printing of Si nanomembrane on flexible substrate with assist of PDMS stamp. Right, direct flip-printing Si nanomembrane on flexible substrate. Reproduced with permission. [72] Copyright 2010, Wiley-VCH. b) Flexible microwave Si TFT using direct flip-printing approach in (a). Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [75] Copyright 2016, Springer Nature. c) Flexible microwave Si TFT using two-step approach in (a). Reproduced with permission. [72] Copyright 2010, Wiley-VCH. d) Cross-section SEM image of flexible Si MOSFET made by thinning a 65 nm node SOI wafer. Reproduced with permission. [45] Copyright 2013, American Institute of Physics. e) Optical images of flexible GaAs HBT on cellulose nanofibril (CNF) substrate. Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [90] Copyright 2015, Springer Nature. f) Schematic illustration and normalized on-state conductance (G/G 0), maximum transconductance (g m /g m0) of flexible InAs MOSFET with self-aligned gate. Reproduced with permission. [53] Copyright 2012, American Chemical Society. g) Cross-section schematic illustration and gain curves of flexible InGaAs/InAlAs HEMT as function of frequency under various bending conditions. Reproduced with permission. [91] Copyright 2013, American Institute of Physics. h) Output power density (P OUT), power gain (G P) and power-added efficiency (PAE) of the flexible GaN HEMT on thermal conductive tape with thermal conductivity of 1.6 W m −1 K −1. Reproduced with permission. [92] Copyright 2017, Wiley-VCH. i) Photography of AlGaN/GaN film grown on BN coated sapphire substrate and printed on flexible tape. Reproduced with permission. [19] Copyright 2017, Wiley-VCH. j) Cross-section schematic illustration of bottom gate flexible graphene FET (GFET). Reproduced with permission. [93] Copyright 2013, American Chemical Society. k) Cross-section schematic illustration of top gate flexible GFET with self-aligned gate configuration. Reproduced with permission. [94] Copyright 2014, American Chemical Society. l) High-frequency characteristics of flexible GFET with gate length of 50 nm. Reproduced with permission. [95] Copyright 2018, Wiley-VCH. m) Schematic illustration and gain curves of flexible microwave transistor based on MoS 2 as function of frequency. Reproduced with permission. [96] Copyright 2014, Springer Nature. n) High-frequency characteristics of flexible microwave transistor based on black phosphorus (BP) as function of frequency. Reproduced with permission.

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“…The versatility of this technique was further demonstrated by applying it to single-crystal germanium (Ge) nanomembranes to form flexible devices displaying GHz response (insertion loss of <1.3 dB at up to 30 GHz and isolation >10 dB at up to ∼13 GHz) [59,60], and later by demonstrating microwave flexible SiNM-based TFTs [61] and Schottky diodes [62] on biodegradable substrates, such as cellulose nanofibrillated fibre (CNF), towards potential green portable devices. Double-gate flexible SiNM TFTs built on a CNF substrate have shown an electron mobility of 160 cm 2 V −1 s −1 and f T and f max of 4.9 GHz and 10.6 GHz, respectively [61].…”

Section: Single Crystalline Si Nanomembranesmentioning

confidence: 99%

Flexible diodes for radio frequency (RF) electronics: a materials perspective

Semple

Georgiadou

Wyatt-Moon

et al. 2017

Semicond. Sci. Technol.

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Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

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Flexible radio-frequency single-crystal germanium switch on plastic substrates

Cited by 16 publications

References 19 publications

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Flexible diodes for radio frequency (RF) electronics: a materials perspective

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