Flexible selfbiased 66.7nJ/c.s. 6bit 26S/s successive-approximation C-2C ADC with offset cancellation using unipolar Metal-Oxide TFTs

Papadopoulos, Nikos; Roose, Florian De; Lai, Yi-Cheng; Steen, Jan-Laurens van der; Ameys, Marc; Dehaene, Wim; Genoe, Jan; Myny, Kris

doi:10.1109/cicc.2017.7993671

Cited by 8 publications

(8 citation statements)

References 10 publications

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“…The back-gate is capable of not only enabling multi-threshold voltage logic (as discussed earlier), but also improving the transconductance or the output resistance of the individual transistors. Enhancing these TFT parameters is a valuable property of analogue circuits, which consists of load TFTs and current sources that require a large output resistance, or improved transconductance for the input pairs, leading to 50 dB gain for a three-stage unipolar metaloxide amplifier 54 . Designing analogue electronics requires a key understanding of the mismatch or deviations of parameters between two transistors.…”

Section: Analogue Circuitsmentioning

confidence: 99%

The development of flexible integrated circuits based on thin-film transistors

2018

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T hin-film transistors (TFTs) are currently the dominant technology for in-pixel switches and drivers in flat-panel displays. Trends in consumer electronics demand ever-higher display resolution and brightness, lower power consumption, and new features and form factors (such as curved and foldable displays). This drives TFT devices to deliver more complex functions than simply switching. For example, recent bezel-less displays delegate the task of row selection to TFT circuits integrated next to the pixel array. Such driver circuits comprise thousands of switches operating together -previously a job for silicon chips mounted around the display.Beyond displays, how far can thin-film circuits go in terms of replacing silicon complementary metal-oxide-semiconductor (CMOS) chips? Fig. 1 illustrates the key advantages of thin-film circuits on flexible substrates. The circuits can be fabricated on large substrates, thereby creating very thin, lightweight and ultra-flexible electronics 1,2 . Folding, rolling or crumpling such flexible circuits is possible without destroying the electronic functionality. Because of these properties, a flexible TFT-based microprocessor 3 (Fig. 1d) or thin-film near-field communication (NFC) tag (Fig. 1e) can, for example, be integrated imperceptibly into any object. TFT technologies also have considerable potential for fabrication on ultrathin stretchable substrates 4 that can be made porous to create breathable devices for contact with skin. With these features, thin-film integrated circuits (ICs) could be a game-changer for wearable electronics. Ultrathin, conformable ICs in the form of a tattoo could be used to monitor vital body parameters, communicating these parameters directly to a patient's smartphone or a medical database.In this Perspective, I discuss the potential of thin-film circuits on plastic substrates for the development of Internet of Things (IoT) and wearable applications. First I look at the different TFT technologies that can be realized on flexible substrates, and then discuss the impact TFT technology will have on circuit design at the level of digital logic gates and very-large-scale integration (VLSI) digital circuits. For the latter, I consider the use of thin-film ICs in the creation of low-cost radiofrequency identification (RFID) tags for everyday items. Flexible chips may initially be used to simply identify each item. Then, when the RFID chip is potentially replaced with a thinfilm NFC chip, standard smartphones and tablets equipped with NFC readers could identify objects and connect them to the cloud. Another advantage of thin-film IC technology is its potential to be combined with sensor or signage technology, thereby integrating more functionality into the objects, which is discussed in a section on analogue circuits. Finally, I will briefly examine the potential of silicon CMOS chip technology to be interfaced directly with TFT circuitry. TFT technologyThe development and optimization of transistor technologies are driven by four important figures of me...

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Section: Analogue Circuitsmentioning

confidence: 99%

The development of flexible integrated circuits based on thin-film transistors

2018

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“…Considering now a traditional Nyquist analog to digital converter with digital time-sampled output, Fig. 4(c) shows a C-2C SAR ADC presented in [32], [90]. The main subblocks of the ADC are a comparator, a DAC, a bias circuit and a digital control sub-block.…”

Section: Data Converters Based On A-igzo Tft Technologymentioning

confidence: 99%

Analog and Mixed Signal Circuit Design Techniques in Flexible Unipolar a-IGZO TFT Technology: Challenges and Recent Trends

Zulqarnain

Cantatore

2021

IEEE Open J. Circuits Syst.

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“…As a result, M3, M8 are turned off and M7 turns on and charges X1p to a voltage close to V X1 . Therefore, V X1p given by (7).…”

Section: Positive DC Voltage Generationmentioning

confidence: 99%

“…However, these converters need to be designed using only n-type transistors due to a lack of stable p-type transistors with oxide semiconductors. 4 Many works report on amplifiers, 5,6 data converters, 7,8 filters, 9 and other circuits 10,11 with a-IGZO TFTs. Nevertheless, the work done on DC-DC converters, with this technology, is limited.…”

Section: Introductionmentioning

confidence: 99%

Positive‐negative DC‐DC converter using amorphous‐InGaZnO TFTs

Tiwari

Bahubalindruni

Goes

et al. 2020

Circuit Theory & Apps

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Summary This paper presents two DC‐DC converters capable of generating either positive or negative output DC voltage using amorphous‐indium gallium zinc oxide (a‐IGZO) thin‐film transistors (TFTs). While one uses conventional diode‐connected cross‐coupled (design‐1), the other employs a bootstrapped cross‐coupled (design‐2) DC‐DC converter, which overcomes the limitations of design‐1 but requires boosted clock pulses. Therefore, an on‐chip clock booster is proposed to generate all the required signals without any external clock pulses. The performance of the proposed circuits (DC‐DC converters and clock booster) has been demonstrated using in‐house a‐IGZO TFT models in the Cadence environment. The simulation results have shown that design‐1 (design‐2) generates negative or positive output DC voltage of 7.25 V (7.8 V) or 12.7 V (15.2 V), respectively, for a supply voltage of 8 V, using a single DC‐DC converter. Therefore, the output DC voltage of design‐2 is close to the theoretical value, and it ensures robust performance against different load currents when compared with design‐1. Besides, design‐2 has shown a maximum power efficiency of 90%, superior compared with design‐1, where power efficiency is 60.7%. Therefore, this circuit finds potential applications in the next generation flexible displays.

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Flexible selfbiased 66.7nJ/c.s. 6bit 26S/s successive-approximation C-2C ADC with offset cancellation using unipolar Metal-Oxide TFTs

Cited by 8 publications

References 10 publications

The development of flexible integrated circuits based on thin-film transistors

The development of flexible integrated circuits based on thin-film transistors

Analog and Mixed Signal Circuit Design Techniques in Flexible Unipolar a-IGZO TFT Technology: Challenges and Recent Trends

Positive‐negative DC‐DC converter using amorphous‐InGaZnO TFTs

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