materials (paper, flexible); adequate device level mobility [2] that can be further optimised by engineering appropriate gate dielectrics; high transparency due to their wide band gap; the capacity for postfabrication tunable resistance (memristive effects) [3,4], and good chemical stability. These features have led to the use of MOs in a variety of applications ranging from resistive random access memories (RRAMs) [5,6] and thin film transistors (TFTs) [7,8] to oxidebased photovol taics [9] and sensors [10], introducing a new era for large area transparent/stretchable electronics [11,12] and neuromor phic systems [13,14]. It is also worth mentioning two very recently published perspective articles [15,16]
AbstractThe electrical properties of thin TiO 2 films have recently been extensively exploited with the aim of enabling a variety of metaloxide electron devices: unipolar and bipolar semiconductor devices and/or memristors. In these efforts, investigations into the role of TiO 2 as active material were the main focus; however, electrode materials are equally important. In this work we address this point by presenting a systematic quantitative electrical characterization study on the interface characteristics of metalTiO 2 metal structures. Our study employs typical contact materials that are used both as top and bottom electrodes in a metalTiO 2 metal setting. This allows an investigation of the characteristics of the interfaces as well as holistically studying an electrode's influence on the opposite interface, referred to in this work as the top/bottom electrodes interrelationship. Our methodology comprises the recording of current-voltage (I-V) characteristics from a variety of solidstate prototypes in the temperature range of 300 K -350 K, and their analysis through appropriate modelling. Clear field and temperaturedependent signature plots were also obtained, so as to shine more light on the role of each material as top/bottom electrodes in metalTiO 2 metal configurations. Our results highlight that these are not conventional metal-semiconductor contacts, and that several parameters are involved in the formation of the interfacial barriers, such as the electrode's position (atop or below the film), the electronegativity, the interface states, and even the opposite interface electrode material. Overall, our study provides a useful database for selecting appropriate electrode materials in TiO 2 based devices, offering new insights into the role of electrodes in metaloxide electronics applications.