Flicker noise in submicron metal oxide semiconductor field effect transistors with nitrided gate oxide

Triantis, D.P.; Birbas, A. N.; Zimmermann, J.

doi:10.1063/1.359186

Cited by 8 publications

(5 citation statements)

References 13 publications

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“…This shows that the nitridation of the interface may have an additional impact on the stoichiometry of the interfacial layer by creating a high density of N-related noisy traps close to the Si-SiO 2 interface. 6,[13][14][15][16] Relation between nitrogen related defects, oxygen vacancies, and the impact of 1/f noise in nitrided-interface and non-nitridedinterface n-MOSFETs.-Depending on the ambient during PDA and the use of DPN, it is clear that different amounts ͑and profiles͒ of nitrogen will be introduced in the gate stack, which may influence the density and profiles of the N-and oxygen-vacancy-related traps. These concentration profiles are also important to determine the impact on 1/f noise.…”

Section: Discussionmentioning

confidence: 99%

“…While all PDAs yield similar S VG values and similar variation with gate voltage overdrive, an order of magnitude lowering occurs for the non-nitrided and no-anneal condition, indicating the presence of nitrogen-related "noisy" traps. 6,[13][14][15][16] From the above results, it is clear that ͑i͒ nitridation of the interface has an impact on both the noise magnitude and the noise mechanism in these devices, ͑ii͒ nitridation of the interface suppresses the effect of the postdeposition anneal, and ͑iii͒ interface nitridation with no anneal has a different noise behavior when compared to a nitrided interface and postdeposition anneal conditions.…”

Section: G820mentioning

confidence: 90%

“…Various advantages have been seen and reported extensively in the literature. [10][11][12][13][14][15][16] Nitridation has been shown to reduce dopant penetration providing more thermal stability to the gate oxides. The effective value of the oxide and its crystallization temperature are found to increase.…”

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confidence: 99%

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Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO[sub 2] Gate Dielectrics

Srinivasan

Simoen

Rittersma

et al. 2006

J. Electrochem. Soc.

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The nitridation effects on low-frequency ͑1/f͒ noise in metallorganic chemical vapor deposited HfO 2 n-and p-metal oxide semiconductor field effect transistors ͑MOSFETs͒ are reported. Devices with a postdeposition anneal ͑PDA͒, performed after HfO 2 deposition, in a N 2 or NH 3 ambient were investigated. A significant variation in noise was observed when different PDAs were employed. Devices annealed with N 2 showed lower input referred noise S VG ͑ϳ125 V 2 /Hz͒ for ͉V G -V T ͉ ϳ 0.1 V, close to the ITRS specifications when compared to NH 3 anneals ͑ϳ1100 V 2 /Hz͒. Carrier trapping is shown to be the origin of the 1/f fluctuations for most n-MOSFET process splits. For p-MOSFETs, no significant impact of the PDA was observed, yielding a constant S VG ͑ϳ200 V 2 /Hz͒. Additionally, two types of interfacial layers were considered for n-MOSFETs, i.e., nitrided and non-nitrided interfaces, prepared by a decoupled plasma nitridation before HfO 2 deposition. Different trap density profiles were derived from the noise spectra for the nitrided-and non-nitrided-interface n-MOSFETs. This suggests that nitridation can induce nitrogen-related defects which lead to a variation in the concentration of oxygen vacancies in the bulk HfO 2 . The binding configuration between the atoms may also play an important role.

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Section: Discussionmentioning

confidence: 99%

Section: G820mentioning

confidence: 90%

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Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO[sub 2] Gate Dielectrics

Srinivasan

Simoen

Rittersma

et al. 2006

J. Electrochem. Soc.

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“…The trap density derived for the p-channel MuGFETs is about 2 times higher than for the corresponding n-type devices. The impact of nitridation of the SiO 2 gate oxide on the LF noise has been studied extensively (21)(22)(23)(24)(25)(26). It has been shown that the presence of nitrogen introduces amphoteric traps in the gate oxide, which increases the 1/f noise.…”

Section: Discussionmentioning

confidence: 99%

Low-Frequency Noise Study of p-Channel Bulk MuGFETs

Simoen¹,

Aoulaiche²,

Collaert³

et al. 2011

ECS Trans.

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The low-frequency (LF) noise in p-channel bulk Multiple-Gate Field-Effect Transistors (MuGFETs) with 2.5 nm SiON gate oxide has been investigated in the ohmic regime from weak to strong inversion. It is shown that both 1/f-like noise and Generation-Recombination (GR) noise are present, giving rise to a wide device-to-device scatter in the spectral density. The 1/f noise is dominated by number fluctuations from which an effective trap density in the range 5×1017 cm-3eV-1 has been derived. At the same time, it is demonstrated that the GR noise originates from traps in the gate oxide.

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“…It was found for SiO 2 oxides, that nitridation provides resistance against interface state generation under stress, insensitivity to radiation and improved dopant barrier properties. Nitridation is also found to decrease gate leakage current but reduces mobility [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 96%

Effect of Nitridation on 1/f Noise in n-MOSFETs with High-k Dielectric

Srinivasan

Simoen²,

Rittersma³

et al. 2006

ECS Trans.

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This paper reports the nitridation effects on 1/f noise in n-MOSFETs with MOCVD HfO 2 as gate dielectric. Nitridation of the gate oxides was carried out by using a post-deposition anneal (PDA) process in a N 2 or NH 3 ambient. Predominantly 1/f γ type noise is observed, with γ ~ 1. For non-nitrided interfaces, significant variation in noise was observed when different PDAs are employed. Among the studied PDAs, devices annealed with N 2 show the lowest input referred noise, close to ITRS specifications when compared to O 2 and NH 3 anneals. Decoupled plasma nitridation (DPN) with 7~9% N 2 content was employed for devices involving nitrided interfaces. Post-deposition anneals on such devices showed a suppressed effect as the input-referred noise was found to have similar values for the different conditions. The noise mechanism is also found to vary in devices with nitrided interface and no-PDA. A significant change in trap profile is noticed between nitrided and non-nitrided interfaces, which may be one of the causes for the differences observed. Lower trap densities are obtained from the trap profile for the non-nitrided no-anneal condition. Volume and interface trap densities, extracted from input-referred noise values, showed lowest values for a N 2 PDA anneal, while an O 2 anneal showed the highest values for non-nitrided devices. Devices with nitrided interfaces show similar value for all PDAs, with the values in-between the N 2 and the O 2 non-nitrided PDA.

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Flicker noise in submicron metal oxide semiconductor field effect transistors with nitrided gate oxide

Cited by 8 publications

References 13 publications

Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO[sub 2] Gate Dielectrics

Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO[sub 2] Gate Dielectrics

Low-Frequency Noise Study of p-Channel Bulk MuGFETs

Effect of Nitridation on 1/f Noise in n-MOSFETs with High-k Dielectric

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