Flip-chip assembly for Si-based RF MEMS

Harsh, Kevin; Zhang, W.; Bright, Victor M.; Lee, Y.C.

doi:10.1109/memsys.1999.746833

Cited by 48 publications

(26 citation statements)

References 10 publications

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“…More recently, there have been efforts in combining the flip-chip packaging technologies and MEMS in RF applications [7], [8]. In batch transfer integration methodology [9], [10], MEMS devices can be fabricated in a custom, optimized process, and transferred onto another substrate after release.…”

mentioning

confidence: 99%

Batch transfer integration of RF microrelays

Milanović¹,

Maharbiz²,

Pister³

2000

IEEE Microw. Guid. Wave Lett.

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Abstract-This letter presents the first implementation of batchtransferred microrelays for a broad range of RF applications and substrates. The transferred relays include two types of electrostatic pull-down structures for series and shunt switching of a CPW. The batch-transfer methodology allows integration of optimized microelectromechanical systems (MEMS) in RF systems on substrates such as sapphire, GaAs, and even CMOS. Gold-to-gold contact series microrelays with insertion loss of 0.3 dB, and isolation better than 15 dB at frequencies from 100 MHz to 50 GHz are demonstrated, as well as shunt switches with 45 dB of isolation and 0.3 dB insertion loss in that frequency range.

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mentioning

confidence: 99%

Batch transfer integration of RF microrelays

Milanović¹,

Maharbiz²,

Pister³

2000

IEEE Microw. Guid. Wave Lett.

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“…This, coupled with surface mount technology (SMT) compatible ball grid array (BGA) solder ball attachment, provides reliable, highly manufacturable signal connections that deliver chip-level high-frequency performance to the circuit board. The use of an alumina substrate also provides substantially lower high-frequency losses than the silicon substrates used in other MEMS switches [6]. This is especially true for devices operating at higher frequencies and for through-substrate via designs like the TT712.…”

Section: Mems Switch Technologymentioning

confidence: 99%

MEMS Switches and SiGe Logic for Multi‐GHz Loopback Testing

et al. 2008

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We describe the use of microelectromechanical system (MEMS) switches and SiGe logic devices for both passive and active loopback testing of wide data buses at rates up to 6.4 Gbps per signal. Target applications include HyperTransport, fully buffered DIMM, and PCI Express, among others. Recently introduced MEMS devices provide >7 GHz bandwidth in a very small package (needed to handle wide buses). SiGe logic supports >7 Gbps signals when active shaping of the waveform is required. Each loopback module typically supports between 9 and 16 differential channels. Multiple cards are used to handle applications with very wide buses or multiple ports. Passive cards utilize MEMS for switching between the loopback (self-test) mode and traditional automated test equipment (ATE) source/receiver channels. Future active card designs may provide additional waveform-shaping functions, such as buffering, amplitude attenuation/modulation, deskew, delay adjustment, jitter injection, and so forth. The modular approach permits precalibration of the loopback electronics and easy reconfiguration between debug or characterization testing and high-volume production screening.

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“…In design of devices like planar and non-planar antenna, filters, power dividers, switches and passive elements, MEMS technology is employed for its high quality factor, wide tuning range, low phase noise and small chip size. MEMS makes it possible to realize not only low insertion loss and bias power consumption but also single chip package which is impossible with standard semiconductor process [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…The electrothermal method is derived from differential thermal expansions caused by differentiating the widths of the beams, which are supporting the movable plates. Compared with the electrostatic method, the electrothermal method has wider tuning ranges, but it is slower and needs more die space [4,5].…”

Section: Introductionmentioning

confidence: 99%

Two Novel Structures for Tunable Mems Capacitor With Rf Applications

Abbaspour-Sani¹,

Nasirzadeh²,

Dadashzadeh³

2007

PIER

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Abstract-Two novel structures for high-Q MEMS tumble capacitors are presented. The proposed designs include full plate as well as the comb structured capacitors. They can be fabricated employing surface micromachining technology which is CMOS-compatible. The structures do not require the cantilever beams which introduce considerable series resistance to the capacitor and decrease the quality factor. Therefore, our proposed structures achieve better Q in a smaller die area. The simulated results for 1 pF full plate capacitor shows a tuning range of 42% and a Q of 47 at 1 GHz. However, with the same initial capacitance, but the comb structure, the tuning range is increased to 43% but the Q is decreased to 45 at 1 GHz. The simulated Pull-in voltage with no residual stress is 3.5 V for both capacitors. The S 11 responses are reported for a frequency range from 1 up to 4 GHz.

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Flip-chip assembly for Si-based RF MEMS

Cited by 48 publications

References 10 publications

Batch transfer integration of RF microrelays

Batch transfer integration of RF microrelays

MEMS Switches and SiGe Logic for Multi‐GHz Loopback Testing

Two Novel Structures for Tunable Mems Capacitor With Rf Applications

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