Flip-chip bonded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrate

Ohiso, Yoshitaka; Tateno, Kouta; Kohama, Y.; Wakatsuki, A.; Tsunetsugu, H.; Kurokawa, Takashi

doi:10.1109/68.531807

Cited by 29 publications

(9 citation statements)

References 7 publications

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“…However, it is important to recognize that because of the relatively large number of parameters involved in matching simulation to experiment, in conjunction with the relatively limited amount of experimental data that is typically available, it can be difficult to ensure that all of the parameter values correctly conform to the corresponding physical mechanism at play in a particular device. For example, consider the AlGaAs VCSEL reported by Ohiso et al [85]. Based on the reported temperature increase of 24 C for an approximate operating point of 6 mA, 2.73 V, and 1.175 mW output power, the actual device thermal impedance can be estimated at 1.6 C/mW.…”

Section: E Discussionmentioning

confidence: 99%

“…The second device is an AlGaInP-based 683-nm selectivelyoxidized VCSEL with a 3 m 3 m area, reported in [82]- [83] [83]. (c) BOTTOM-EMITTING AlGaAs VCSEL [85]. (d) THIN-OXIDE-APERTURED VCSEL [86] We extracted the model parameters needed to fit the LIV data, resulting in the values listed in Table II, valid over the range of operating conditions in the experimental data.…”

Section: B Selectively Oxidized Algainp Vcselmentioning

confidence: 99%

“…The next device is the 863-nm bottom-emitting AlGaAs VCSEL presented by Ohiso et al in [85]. This 16-m diameter device was grown on an Al 0.1 Ga 0.9 As substrate and consists of a Si-doped Al 0.15 Ga 0.85 As-AlAs, GaAs-Al 0.2 Ga 0.8 As -type DBR, six quantum wells, and a C-doped Al 0.15 Ga 0.85 As-Al 0.5 Ga 0.5 As-AlAs -type DBR.…”

Section: Bottom-emitting Algaas Vcselmentioning

confidence: 99%

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A comprehensive circuit-level model of vertical-cavity surface-emitting lasers

Mena

Morikuni

Kang

et al. 1999

J. Lightwave Technol.

107

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The increasing interest in vertical-cavity surfaceemitting lasers (VCSEL's) requires the corresponding development of circuit-level VCSEL models for use in the design and simulation of optoelectronic applications. Unfortunately, existing models lack either the computational efficiency or the comprehensiveness warranted by circuit-level simulation. Thus, in this paper we present a comprehensive circuit-level model that accounts for the thermal and spatial dependence of a VCSEL's behavior. The model is based on multimode rate equations and empirical expressions for the thermal dependence of the activelayer gain and carrier leakage, thereby facilitating the simulation of VCSEL's in the context of an optoelectronic system. To confirm that our model is valid, we present sample simulations that demonstrate its ability to replicate typical dc, small-signal, and transient operation, including temperature-dependent lightcurrent (LI) curves and modulation responses, multimode behavior, and diffusive turn-off transients. Furthermore, we verify our model against experimental data from four devices reported in the literature. As the results will show, we obtained excellent agreement between simulation and experiment.

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Section: E Discussionmentioning

confidence: 99%

Section: B Selectively Oxidized Algainp Vcselmentioning

confidence: 99%

Section: Bottom-emitting Algaas Vcselmentioning

confidence: 99%

See 1 more Smart Citation

A comprehensive circuit-level model of vertical-cavity surface-emitting lasers

Mena

Morikuni

Kang

et al. 1999

J. Lightwave Technol.

107

View full text Add to dashboard Cite

show abstract

“…The device used in the simulation is an 863-nm bottom-emitting VCSEL with a 16-mm diameter [3][4] [5]. The device parameters are taken from reference [3].…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Thermal analysis based on rate-equation model for VCSELs

Tian¹,

Wang²,

Gao³

2006

SPIE Proceedings

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“…Because the naturally used GaAs substrate is highly absorptive at 850 nm, the main challenge lies in the fabrication of bottom-emitting VCSEL arrays where, however, several feasible routes have already been devised. Among those are epitaxial growth on a transparent AlGaAs substrate [14], wafer bonding to a new host substrate [15,16,17], or incorporation of light outcoupling holes [18]. Complete substrate removal after flip-chip bonding, leaving only a thin film of epitaxially grown material or even individual islands, has been demonstrated with LEDs [19], optical modulators [20] and VCSELs [21].…”

Section: Au/sn Bump Vcselmentioning

confidence: 99%

Fabricating VCSELs in a high-tech start-up

et al. 2003

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U-L-M photonics GmbH has been set up to develop next-generation vertical-cavity surface-emitting laser (VCSEL) products and to exploit the full potential of these industry-leading devices in terms of performance and application areas. Reliability is important for all application areas for VCSELs. This paper presents the excellent reliability characteristics of U-L-M's VCSEL technology. Accumulation of all advantageous properties VCSELs are famous for, like low power consumption, circular low divergent beam profile, high modulation bandwidth, and scalability of monolithic arrangements, results in two-dimensional (2D) VCSEL arrays that appear as key components to reach highest aggregate bandwidths of tomorrow's parallel optical transceivers. We report on 2D VCSEL arrays, substrate emitting although operating at 850 nm and prepared for flip-chip bonding, that are well suited for the customer's needs in terms of speed, power consumption, and compact integration. Up to now, in most single channel transceivers, the VCSEL is packaged in a TO can and connected to the driver via a printed circuit board. We investigate the performance of a high speed VCSEL in a TO 46 package and demonstrate 10 Gbps transmission. The potential of VCSEL technology in other areas of application than datacom or telecom is just going to be exploited. We present a 760 nm single-mode VCSELs for gas monitoring applications.

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Flip-chip bonded 0.85-μm bottom-emitting vertical-cavity laser array on an AlGaAs substrate

Cited by 29 publications

References 7 publications

A comprehensive circuit-level model of vertical-cavity surface-emitting lasers

A comprehensive circuit-level model of vertical-cavity surface-emitting lasers

Thermal analysis based on rate-equation model for VCSELs

Fabricating VCSELs in a high-tech start-up

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