2014
DOI: 10.1002/smll.201401872
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Floating Gate Memory-based Monolayer MoS2Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics

Abstract: Charge trapping layers are formed from different metallic nanocrystals in MoS2 -based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10(5) and a long retention time of 10 years.

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Cited by 112 publications
(93 citation statements)
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“…Figure 8c shows an organic ferroelectric material-based nonvolatile memory transistor with a MoS 2 nanoflake as the readout channel (125). A floating-gate memory transistor with metal nanocrystals embedded into the gate dielectric has also been reported on the basis of MoS 2 FETs (126). Alternative device concepts like tunneling field effect transistors (TFETs), which work on the principle of energy filtering and which have the potential to operate at ultralow power, could be best realized by using 2D materials (127).…”
Section: Transition Metal Dichalcogenide Electronicsmentioning
confidence: 98%
“…Figure 8c shows an organic ferroelectric material-based nonvolatile memory transistor with a MoS 2 nanoflake as the readout channel (125). A floating-gate memory transistor with metal nanocrystals embedded into the gate dielectric has also been reported on the basis of MoS 2 FETs (126). Alternative device concepts like tunneling field effect transistors (TFETs), which work on the principle of energy filtering and which have the potential to operate at ultralow power, could be best realized by using 2D materials (127).…”
Section: Transition Metal Dichalcogenide Electronicsmentioning
confidence: 98%
“…After these early works, a number of follow‐up studies were conducted to identify the best GRMs for use as charge‐storage layers in flash memories (see Table ) . Various research groups focused their attention on the combination of metal NPs, polymers, high‐κ dielectrics and 2D TMDs for improving the memory window, the charge retention and the switching ratio of flash‐memory cells . The group of S.‐Y.…”
Section: Flash Memories Based On Grmsmentioning
confidence: 99%
“…[3] Moreover,B Pw ith high mobility and as izeable band gap is at the electronic intersection of graphene (a zero-gap highmobility 2D material) and semiconducting transition metal dichalcogenides (large-gap low-mobility 2D materials). [2,[19][20][21] These fascinating properties suggest that BP is not only promising in nanoscale electronic devices, [22][23][24][25][26] but also suitable for near-a nd mid-infrared region optoelectronic applications. [27][28][29][30][31] Moreover,BPnanosheets possess excellent photochemical and photothermal properties with potential catalytic and biomedical applications.…”
mentioning
confidence: 99%