Flow instability driven by the combined temperature gradient and counter rotation of crucible and crystal in a liquid-encapsulated Czochralski configuration

Wu, Chun-Mei; Li, You–Rong

doi:10.1016/j.ijheatmasstransfer.2013.05.022

Cited by 6 publications

(1 citation statement)

References 34 publications

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“…Asadi et al carried out axisymmetric simulations in Cz furnace for silicon growth, and studied melt flow patterns and temperature distributions with several combinations of crystal and crucible rotations. In certain circumstance, crystal/crucible rotation causes instability of melt convection . Besides the influence of rotation on the growth, RF coil also plays an important role of hot zone design .…”

Section: Introductionmentioning

confidence: 99%

Numerical optimization of czochralski sapphire single crystal growth using orthogonal design method

Fang

Tian

Wang

et al. 2014

Crystal Research and Technology

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Crystal quality during Czochralski (Cz) growth is influenced significantly by the convexity of solid/liquid (S/L) interface, which is related to operating conditions, such as Radio‐Frequency (RF) coil position, crystal rotation and crucible rotation. Generally, a flat interface shape is preferred for high‐quality crystal growth. It is difficult to achieve the optimized conditions even from numerical modeling due to the large computational load from examining all of the affecting factors. Orthogonal design/test method, fortunately, provides an efficient way to organize the study of multiple factors with the minimization of computational load. In the paper, this method is adopted to investigate the affecting factors of Cz‐sapphire single crystal growth based on the coupled calculation of thermal field and melt flows. The orthogonal analysis clearly reveals the optimized growth conditions to achieve a relative flat S/L interface under the current ranges of the parameters.

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Section: Introductionmentioning

confidence: 99%