Fluorination of Al₂O₃ blocking layer for improving the performance of metal‐oxide‐nitride‐oxide‐silicon flash memory

Abstract

The characteristics of Al2O3 film grown by atomic‐layer deposition as blocking layer with and without fluorine plasma treatment were investigated based on a capacitor structure of Al/Al2O3/TaON/SiO2/Si. The physical structure was studied by transmission electron microscopy, and the chemical composition of the blocking layer was analyzed by X‐ray photoelectron spectroscopy and secondary ion mass spectroscopy. Moreover, the surface roughness of the blocking layer was investigated by atomic force microscopy. Compared with a capacitor with Al2O3 blocking layer, the one with fluorinated Al2O3 displayed higher programming/erasing speeds, better endurance property and better charge retention characteristic because the fluorination could reduce excess oxygen and traps in the blocking layer, thus forming a larger barrier height at the interface between the charge‐trapping layer and the blocking layer. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Carbon-Interacted AlF3 Clusters as Robust Catalyst for Dehydrofluorination Reaction with Enhanced Undercoordination and Stability

“…The EPR signal of AlF 3 -py is faint, suggesting an exceedingly low content of fluorine defects in the catalyst. Notably, a robust signal of AlF 3 –SAPO-5 is detectable at g = 2.0004, indicating that the presence of numerous F detects originated from under-coordinated Al-site, , consistent with the NMR characterization . Hence, the catalytic activity of AlF 3 –SAPO-5 with a large number of unsaturated coordination Al species for HFC-152a dehydrofluorination is superior to AlF 3 -py.…”

Passivation of oxide traps in gallium arsenide (semiconductor) metal-oxide-semiconductor capacitor with high-k dielectric by using fluorine incorporation

“…With almost the same T ox , the Post-F sample has an even smaller V fb (0.7 V) than the Pre-F sample, implying that the fluorine-plasma treatment after deposition of the gate dielectric can effectively reduce the oxide traps and interface states. 20,21 This can be further supported by the smallest equivalent oxide-charge density (Q ox ) of the Post-F sample (À3.52 Â 10 12 cm À2 ), calculated by…”