Focused ion beam nanolithography on AlF3 at a 10 nm scale

Giérak, J.; Vieu, Christophe; Launois, H.; Assayag, Gérard; Septier, A.

doi:10.1063/1.118810

Cited by 34 publications

(19 citation statements)

References 8 publications

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“…Figure 5 displays two examples of ion beam micromachined structures on (a) GaAs and (b) a multilayer sample of 50 nm thick AlF 3 on GaAs [40,41]. A large number of experiments have been performed to demonstrate the viability of the technique, including optical and X-ray msk repairing, quantum devices fabrication, scanning probe tip modification and, more recently, biomolecule microsurgery and analysis [42].…”

Section: Focused Ion Beam Lithographymentioning

confidence: 99%

Nanofabrication: Conventional and nonconventional methods

2001

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Nanofabrication is playing an ever increasing role in science and technology on the nanometer scale and will soon allow us to build systems of the same complexity as found in nature. Conventional methods that emerged from microelectronics are now used for the fabrication of structures for integrated circuits, microelectro-mechanical systems, microoptics and microanalytical devices. Nonconventional or alternative approaches have changed the way we pattern very fine structures and have brought about a new appreciation of simple and low-cost techniques. We present an overview of some of these methods, paying particular attention to those which enable large-scale production of lithographic patterns. We preface the review with a brief primer on lithography and pattern transfer concepts. After reviewing the various patterning techniques, we discuss some recent application issues in the fields of microelectronics, optoelectronics, magnetism as well as in biology and biochemistry.

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Section: Focused Ion Beam Lithographymentioning

confidence: 99%

Nanofabrication: Conventional and nonconventional methods

2001

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“…The intermixing of the Ag2Se/GeSe2 bilayer system caused by ion bombardment proved also to be a viable patterning technique (Wagner, 1981). Selfdevelopment was shown using two materials, namely AlF3 (Gierak et al, 1997) and nitrocellulose (Harakawa, 1986). Resist-based focused IBL was studied extensively in the 1980s (Gierak et al, 1997).…”

Section: Resist-based Lithographymentioning

confidence: 99%

“…Selfdevelopment was shown using two materials, namely AlF3 (Gierak et al, 1997) and nitrocellulose (Harakawa, 1986). Resist-based focused IBL was studied extensively in the 1980s (Gierak et al, 1997). FIB devices for resist-based FIB lithography were put on the market and the impact of ion irradiation on resist materials was investigated.…”

Section: Resist-based Lithographymentioning

confidence: 99%

Focused Ion Beam Lithography

Wanzenboeck¹,

Waid²

2011

Recent Advances in Nanofabrication Techniques and Applications

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“…FIB is useful for monolithic fabrication because it does not require lithography and allows nanometric etching resolution 10 . Several works have reported the use of this technique for ion implantation, due to the high beam intensity around 30keV and the great precision in beam positioning [5][6][7][8] . Also, FIB has been employed in silicon based devices.…”

Section: Introductionmentioning

confidence: 99%

“…Focused Ion Beam (FIB) has been widely used in Transmission Electronic Microscopy (TEM) and recently has been used for micro and nanofabrication [1][2][3][4][5][6][7][8][9][10][11] . FIB is useful for monolithic fabrication because it does not require lithography and allows nanometric etching resolution 10 .…”

Section: Introductionmentioning

confidence: 99%

Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam

Vallini¹,

Figueira²,

Jarschel³

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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InGaAsP/InP quantum wells (QW) ridge waveguide lasers were fabricated for the evaluation of Ga + Focused Ion Beam (FIB) milling of mirrors. Electrical and optical proprieties were investigated. A 7% increment in threshold current, a 17% reduction in external quantum efficiency and 15 nm blue shift in the emission spectrum were observed after milling as compared to the as cleaved facet result. Annealing in inert atmosphere partially revert these effects resulting in 4% increment in threshold current, 11% reduction in external efficiency and 13 nm blue shift with the as cleaved result.The current-voltage behavior after milling and annealing shows a very small increase in leakage current indicating that optical damage is the main effect of the milling process.

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Focused ion beam nanolithography on AlF3 at a 10 nm scale

Abstract: Very high-resolution focused ion beam nanolithography improvement: A new three-dimensional patterning capability J.

Cited by 34 publications

References 8 publications

Nanofabrication: Conventional and nonconventional methods

Nanofabrication: Conventional and nonconventional methods

Focused Ion Beam Lithography

Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam

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