2020
DOI: 10.35848/1347-4065/ab922d
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Formation and dissolution of conductive channels in an Ag2S-islands network

Abstract: A network that shows dynamical change in response to each input pattern works as a reservoir. In this study, we propose to use a network of Ag2S islands for reservoir computing. Input of a small number of electrons to an Ag2S island from a neighbored island causes Ag nanowire growth, which eventually connects the two islands. Shrinkage of an Ag nanowire also occurs depending on the distribution of a local electric potential. Thus, growth and shrinkage of Ag nanowires among Ag2S islands shows dynamical change i… Show more

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Cited by 5 publications
(4 citation statements)
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“…One of the first resistive switching memory devices to be realised, the atomic switch [52], typically uses Ag 2 S as the electrolyte material and Ag as the active metal electrode. Recognising the potential for a unique neuromorphic system by combining the memristive synthetic synapse functionality with the recurrent network structure of an NWN, Gimzewski, Stieg and colleagues at UCLA-CNSI and NIMS-MANA extended the atomic switch concept further by demonstrating Ag-Ag 2 S NWNs [45,59] (see also [93]). In an innovative approach that integrates top-down fabrication with bottom-up self-assembly (Figure 8), Ag nanowires were grown on a substrate that was lithographically pre-patterned with seed Cu posts (100 nm high, 1 μm pitch).…”
Section: Atomic Switch Nanowire Networkmentioning
confidence: 99%
“…One of the first resistive switching memory devices to be realised, the atomic switch [52], typically uses Ag 2 S as the electrolyte material and Ag as the active metal electrode. Recognising the potential for a unique neuromorphic system by combining the memristive synthetic synapse functionality with the recurrent network structure of an NWN, Gimzewski, Stieg and colleagues at UCLA-CNSI and NIMS-MANA extended the atomic switch concept further by demonstrating Ag-Ag 2 S NWNs [45,59] (see also [93]). In an innovative approach that integrates top-down fabrication with bottom-up self-assembly (Figure 8), Ag nanowires were grown on a substrate that was lithographically pre-patterned with seed Cu posts (100 nm high, 1 μm pitch).…”
Section: Atomic Switch Nanowire Networkmentioning
confidence: 99%
“…Bias application to V in causes diffusion of Ag + cations in each Ag 2 S island, which results in growth/ shrinkage of an Ag filament between Ag 2 S islands. These phenomena induce the formation of random conductive channels, 22) which is observed as nonlinear resistance change between V in and V out electrodes. Using the characteristics, basic operations of reservoir computing have been demonstrated, 23) where voltage waves were used as input signals.…”
Section: Introductionmentioning
confidence: 99%
“…Adding an extra I/V measuring system to the C-AFM can potentially remove this limit. Dynamically controlling resistance by growing Ag nanowires can be used in such things as unconventional computing, [35][36][37][38] where conductive channels are modified not only by an Ag filament in a gap between Ag 2+δ S nano-islands but also by the Ag 2+δ S nano-islands themselves. 39) The technique demonstrated in this study will contribute to the development of such new computing systems.…”
Section: Resultsmentioning
confidence: 99%