Formation and elimination mechanism of thermal blistering in Al2O3/Si system

Zhao, Shuai; Yuan, Guodong; Zhang, Di; Xu, Pengfei; Li, Guozheng; Han, Wei

doi:10.1007/s10853-021-06441-9

Cited by 11 publications

(9 citation statements)

References 46 publications

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“…In addition, the refractive index values of 1.86 ± 0.02, 1.95 ± 0.02, and 2.01 ± 0.02 that were determined in this work for 80–100 nm thick amorphous films deposited at 150–350 °C, κ(ε)-Ga 2 O 3 films deposited at 450–500 °C, and α-Ga 2 O 3 films deposited at 350–550 °C, respectively, indicate that the deposition method can also be applied for fabrication of efficient antireflection coatings for optoelectronic devices that are based on silicon or III–V compounds. It is also important to note that as the precursors used in the GaI 3 –O 3 ALD process do not contain hydrogen, detrimental effects of blistering and delamination of thin films , as well as limitations in the control of the concentration and type of charge carriers in Ga 2 O 3 , all related to unintentional H-doping, can be easily minimized when applying this ALD process.…”

Section: Resultsmentioning

confidence: 99%

“…It is obvious that the residual impurities might also have a considerable detrimental effect on several other material properties. For instance, hydrogen that tends to contaminate oxide films grown in ALD processes using metalorganic compounds and/or water vapor as the precursors has caused blistering and delamination of the films. , In addition, unintentional H-doping limits the possibility to control the concentration and type of charge carriers in Ga 2 O 3 …”

Section: Introductionmentioning

confidence: 99%

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Atomic Layer Deposition of Ga₂O₃ from GaI₃ and O₃: Growth of High-Density Phases

Aarik

Mändar

Kozlova

et al. 2023

Crystal Growth & Design

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Gallium oxide thin films, containing either α-Ga2O3 or κ-Ga2O3 crystalline phases, were grown by atomic layer deposition (ALD) by using GaI3 and O3 as precursors. The κ-Ga2O3 phase was observed in the films grown on Si(1 0 0) at substrate temperatures ≥450 °C, while α-Ga2O3 was obtained at temperatures ≥275 °C on α-Cr2O3 seed layers deposited on Si(1 0 0). The seed layers with thicknesses down to 0.7 nm appeared to be sufficient to initiate the α-Ga2O3 growth. The densities of 5.2–5.3 g/cm3 for amorphous films deposited at the substrate temperatures 150–234 °C, 5.9−6.1 g/cm3 for the films deposited on uncoated Si substrates at 450–550 °C, and 6.3−6.4 g/cm3 for the films deposited on α-Cr2O3 seed layers at 350–550 °C were determined from X-ray reflectometry measurements. The growth per cycle decreased from 0.17 to 0.05–0.09 nm with the growth temperature increase from 150 to 550 °C. Notably, the growth rates of α-Ga2O3 films on α-Cr2O3 seed layers were significantly higher at 350–450 °C than those of the films deposited on uncoated Si at the same temperatures, indicating that crystal structure influenced the growth per cycle in this ALD process. The concentration of iodine impurities did not exceed 3.2 at. % in the films deposited at 150 °C. With the growth-temperature increase to 350 °C, the concentration of impurities decreased to ≤0.04 at. % in the films grown on bare Si and ≤0.01 at. % in the films grown on α-Cr2O3 seed layers.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Ga₂O₃ from GaI₃ and O₃: Growth of High-Density Phases

Aarik

Mändar

Kozlova

et al. 2023

Crystal Growth & Design

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“…On this basis, we fabricated n-channel IGFET devices on ultrathin Si/Ge superlattice materials using the low-thermalbudget ohmic contact technique. The flat contact surface together with an Al 2 O 3 /SiO 2 stack [46] ensures the interface flatness. Moreover, the parasitic resistances are efficiently reduced in the S/D contact regions.…”

Section: Resultsmentioning

confidence: 99%

Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials

Zhang¹,

Yuan²,

Zhao³

et al. 2022

J. Phys. D: Appl. Phys.

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Thermal budget is always a vital element in Si-based superlattice materials processing. In this work, a novel n-type ohmic contacting scheme with a low processing thermal budget is developed by combining the high-dose ion implantation and low-temperature alloying techniques. The optimized specific contact resistivity (ρc) is reduced to 6.18×10-3 Ω·cm² at a low thermal budget of 400 °C, and this is a result of the efficient low-temperature electrical activation in amorphous substances. It is indicated that both the high doping concentration and the formation of NiSi(Ge) alloy phase contribute to the linear ohmic contacting behavior. The ohmic contact resistance dependency on processing temperature is further revealed by a detailed Ni/Si(Ge)-alloying model. A minimum ρc of 2.51×10−4 Ω·cm² is achieved at a thermal budget of 450 °C, which is related to the high bonding intensity at metal/semiconductor interface. Note that this technique is compatible with standard Si-based CMOS process flow, and meanwhile can be applied in high-performance insulated-gate field-effect transistor (IGFET) fabrication. Furthermore, it is verified in our IGFETs that Si/Ge superlattice structures can serve as an efficient potential barrier to constrain electrons.

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“…Thereafter, 55 nmthick surface SiO 2 (SOX) layer was grown by dry oxidation at 920 • C. Source/drain definition was then realized through P ion implantation and post-annealing utilizing N 2 as protective gas (950 • C, 1 h). 30 nm-thick Al 2 O 3 layer with a permittivity of ∼8.1 was synthesized in thermal atomic layer deposition system at 150 • C [20]. Followed by contact region etching, patterned Ni/Al metal layer was then evaporated on both the front-side and the back-side wafer surfaces, and made to undergo a silicidation course (N 2 , 450 • C, 2 min).…”

Section: Methodsmentioning

confidence: 99%

Electron transport characteristics in dual gate-controlled 30 nm-thick silicon membrane

Zhao¹,

Yuan²,

Zhang³

et al. 2022

J. Phys. D: Appl. Phys.

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The exploration of multi-gate-controlled electron transport characteristics is always a research focus in Si-based device development and optimization. In this work, we report individual and dual gate-controlled energy band regulations of 30 nm-thick Si membrane and the resulted electron transportations at 10 to 300 K. It is discovered that the fine energy band structure is a key element to determine electron transport behaviors in FDSOI. Furthermore, either the front or the back gate bias can modify the energy band bending and sub-band gap, change charged body distribution and intersub-band transition probability, and thus adjust electron mobility and device performance. This dual gate coupling effect together with the proposed gate-controlled sub-band structure model is confirmed by magnetotransport experiments at 1.6 K. Notably, our work presents the coupled gate controlling effects within ultrathin Si film, and gives a physical insight into electron structure modulating, which may promote the evolution of Si-based device applications in many domains.

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Formation and elimination mechanism of thermal blistering in Al2O3/Si system

Cited by 11 publications

References 46 publications

Atomic Layer Deposition of Ga₂O₃ from GaI₃ and O₃: Growth of High-Density Phases

Atomic Layer Deposition of Ga₂O₃ from GaI₃ and O₃: Growth of High-Density Phases

Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials

Electron transport characteristics in dual gate-controlled 30 nm-thick silicon membrane

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Formation and elimination mechanism of thermal blistering in Al2O3/Si system

Cited by 11 publications

References 46 publications

Atomic Layer Deposition of Ga2O3 from GaI3 and O3: Growth of High-Density Phases

Atomic Layer Deposition of Ga2O3 from GaI3 and O3: Growth of High-Density Phases

Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials

Electron transport characteristics in dual gate-controlled 30 nm-thick silicon membrane

Contact Info

Product

Resources

About

Atomic Layer Deposition of Ga₂O₃ from GaI₃ and O₃: Growth of High-Density Phases

Atomic Layer Deposition of Ga₂O₃ from GaI₃ and O₃: Growth of High-Density Phases