Formation and origin of the dominating electron trap in irradiated<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type silicon

Vines, Lasse; Monakhov, E. V.; Kuznetsov, A. Yu.; Kozłowski, Roman; Kamiński, P.; Svensson, B. G.

doi:10.1103/physrevb.78.085205

Cited by 25 publications

(28 citation statements)

References 28 publications

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“…Levels from C i were, however, seen in samples where the DLTS measurements were done only hours after the implantation. This is consistent with reports that C i completely transforms into the K-center in CZ-samples after room-temperature storage for a few days [19]. In addition to the mentioned levels, two hole traps, H(0.25) and H(0.46), are revealed in Fig.1 and their origin will be discussed later.…”

Section: Introductionsupporting

confidence: 90%

“…• C, and after treatment at 200 • C it is below the detection limit (not shown), similar to reports by Vines et al [19] and Mooney et al [18]. Hence, it is evident that the annealing mechanism of E(0.22) does not involve H, as the addition of H to the defect surroundings does not change the stability of the defect.…”

Section: Introductionsupporting

confidence: 83%

“…From the literature, these levels have previously been reported as resulting from the C i C s pair (E v +0.09eV) [15], V 2 (E v +0.18eV) [16], the K-center (E v +0.35eV) [17] and the B i O i pair (E c -0.22eV) [18]. However, Vines et al [19] showed recently that the origin and formation kinetics of the latter level are not yet fully understood, and consensus remains to be established. As the measurements were conducted a few days after the implantation, and the samples were stored at roomtemperature, no levels associated with C i are detected (Fig.1).…”

Section: Introductionmentioning

confidence: 87%

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Hydrogen‐related defects in boron doped p‐type silicon

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Mark West considers the qualities of the analogue against the digital in the context of his work at the Centre for Architectural Structures and Technology (CAST) at Manitoba. Unable to fault the computer's ability to provide complex calculations for the fabrication of forms, he insists that the fidelity and investigative potential that he has found in the reality of the physical model and hand‐drafted drawing have yet to be surpassed. Copyright © 2008 John Wiley & Sons, Ltd.

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Section: Introductionsupporting

confidence: 90%

Section: Introductionsupporting

confidence: 83%

Section: Introductionmentioning

confidence: 87%

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Hydrogen‐related defects in boron doped p‐type silicon

Malmbekk

Vines

Monakhov

et al. 2010

Phys. Status Solidi (c)

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“…The formation of this complex is through the interaction of migrating divacancy with interstitial oxygen [16]. The trap TR6, also found in samples A and B, is attributed to a donor center assigned to the carbon interstitial [18]. The other trap found in the both samples A and B is trap TR9 assigned to the tri-vacancy (V 3 ).…”

Section: Methodsmentioning

confidence: 99%

Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms

2014

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High-resolution photoinduced transient spectroscopy has been applied to investigating the eect of the 1 MeV neutron uence on the electronic properties of radiation defects in Czochralski grown silicon in magnetic eld. A new approach to the analysis of the photocurrent relaxation waveforms as a function of time and temperature has been presented. It is based on using a two-dimensional numerical procedure with implementation of the inverse Laplace transformation for creating images of the sharp spectral fringes depicting the temperature dependences of the thermal emission rate for detected defect centers. In the material irradiated with the uence of 3 × 10 14 cm −2 , the dominant traps with activation energies of 75 meV and 545 meV are tentatively identied with an aggregate of three Si interstitials and the trivacancy, respectively. In the material irradiated with the uence by the order of magnitude higher, the activation energies of the main traps are found to be 115, 350, 505, 545, and 590 meV. These traps are tentatively attributed to an aggregate of four Si interstitials, as well as to vacancy related centers such as V3 (2-/-), V2O (-/0), V3 (-/0) and V4 (-/0), respectively.

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“…On the other hand, as the structure of thread-like crystals (whiskers) is perfect, it allows to model defects, arising in crystals during irradiation [3].…”

Section: Introductionmentioning

confidence: 99%

Magnetic and magnetoresistive characteristics of neutron-irradiated Si0.97Ge0.03 whiskers

Litovchenko¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The effect of 8.6•10 17 n/cm 2 with fast neutron irradiation on the magnetic susceptibility of Si 0.97 Ge 0.03 thread-like crystals (whiskers) with impurity concentration near metal-insulator junction has been studied. Significant differences have been observed in the change of magnetic susceptibility of irradiated whiskers and bulk Cz-Si. The low-temperature (4.2…40 K) changes of magnetoresistance in magnetic fields up to 14 T, caused by irradiation, have been studied. It has been established that at temperatures near 4.2 K, a significant contribution to the conductivity is made by light charge carriers of low concentration but with high mobility. The level supplying these charge carriers has the energy of  = 2.1 meV, and with application of magnetic field it increases up to  = 2.5 meV in approx. 10 T field. It demonstrates the fact that the reason of magnetoresistance, beside the magneto-field decrease of mobility, is the magneto-field decrease in the free carrier concentration. At temperatures approx. 40 K, conductivity is due to holes, the activation energy whereof is  = 11.5 meV, which is practically independent of the magnetic field.

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Formation and origin of the dominating electron trap in irradiatedp-type silicon

Cited by 25 publications

References 28 publications

Hydrogen‐related defects in boron doped p‐type silicon

Hydrogen‐related defects in boron doped p‐type silicon

Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms

Magnetic and magnetoresistive characteristics of neutron-irradiated Si0.97Ge0.03 whiskers

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