Formation and photoluminescence of Si nanocrystals in controlled multilayer structure comprising of Si-rich nitride and ultrathin silicon nitride barrier layers

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

“…Under PE-CVD conditions, high quality SiN x films with minimal hydrogen content can be obtained in the temperature range of 300-400 • C. This temperature range is also needed to yield higher density films with low porosity and surface roughness, since it allows longer surface diffusion length of adsorbed radicals in comparison to when lower substrate temperatures are applied. 31 Significantly lower substrate temperature (<100…”

“…Most common applications for sputtered SiN x films consist primarily of a barrier/passivation coating and etch stop in microelectromechanical systems (MEMS); 74,116 high refractive index material for solar cells, 25 through-Si vias for three-dimensional (3D) semiconductor devices, electroluminescent devices, and display devices; 25,31 and high κ dielectric layer in stacked high-dielectric constant (κ) structures for non-volatile memory (NVM) devices. 75 A unique application is as a host material for Si nanocrystals as active light emitters for uses in PL and optoelectronic devices.…”

“…The resulting findings indicated that sputtering was more appropriate than PE-CVD in yielding higher quality SiN x films with enhanced density, with the lower density in the PE-CVD coatings being attributed to the inclusion of hydrogen (due to the lower processing temperature employed). 25 Another report of note 31 focused on the formation of Si nanocrystals (Si-NC) in multilayered structures consisting of alternating Si-rich SiN x (SRN) and Si 3 N 4 ultrathin films. In this case, the N/Si ratio in the SRN layers was regulated by co-sputtering from Si (DC magnetron sputtering) and Si 3 N 4 (RF magnetron sputtering) targets.…”

“…[27][28][29][30] Nitrogen-rich silicon and SiN x films also serve as host matrix for Si nanocrystals for use in optoelectronic device applications. 31,32 Other applications include the use of hydrogenated amorphous siliconnitrogen (a-SiN x :H) films as an insulating layer in thin-film transistors…”

“…In this respect, Tables II and III present details of very recent vapor phase deposition techniques of SiN x thin films, along with a synopsis of intended applications. 15,16,[20][21][22][23][24][25][31][32][33][34][36][37][38] More specifically, Table II summarizes PVD and CVD work, while Table III focuses exclusively on atomic layer deposition ALD.…”