Formation of InGaAs-On-Insulator Structures by Epitaxial Lateral Over Growth from (111) Si

Hoshii, Takuya; Deura, Momoko; Shichijo, Masato; Sugiyama, M.; Sugahara, Satoshi; Takenaka, Mikihito; Nakano, Yasuhiko; Takagi, Satoru

doi:10.7567/ssdm.2007.f-1-5

Cited by 3 publications

(6 citation statements)

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“…We have found that InGaAs films formed on (111) Si substrates are superior to those on (100) Si, in terms of the film uniformity, the flatness and the orientation control. As a result, we have demonstrated that InGaAs succeeding the crystal orientation of the Si substrates can be successfully formed on SiO 2 by ELO [2]. However, the surface morphology was not smooth in the large Si seed areas.…”

Section: Micro Selective Area Growthmentioning

confidence: 87%

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Epitaxial lateral overgrowth of InGaAs on SiO₂ from (111) Si micro channel areas

Hoshii

Deura

Sugiyama

et al. 2008

Phys. Status Solidi (c)

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In this paper, we demonstrate that micro selective area growth (μSAG) is effective in improving the crystal quality of InGaAs on (111) Si through the decrease in the number of the nuclei on a selective growth Si area. It is found that smaller selective areas are better in the morphology of the epitaxial films, while the pitch of selective areas yields a trade‐off relationship between the selectivity and the lateral growth length. It is demonstrated that InGaAs films with good morphology and large lateral growth areas have been obtained by μSAG on (111) Si dot areas with the diameter of 2 μm and the pitch of 5 μm using metal‐organic vapor phase epitaxy (MOVPE). This result suggests that μSAG using MOVPE is a promising technique for III‐V‐On‐Insulator structures on Si substrates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Micro Selective Area Growthmentioning

confidence: 87%

“…We have already reported the growth of InGaAs films from larger Si seed regions by using MOVPE [2]. We have found that InGaAs films formed on (111) Si substrates are superior to those on (100) Si, in terms of the film uniformity, the flatness and the orientation control.…”

Section: Micro Selective Area Growthmentioning

confidence: 97%

Epitaxial lateral overgrowth of InGaAs on SiO₂ from (111) Si micro channel areas

Hoshii

Deura

Sugiyama

et al. 2008

Phys. Status Solidi (c)

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“…The device operation of InAs vertical MOSFETs on InAs substrates has already been reported [60]. Actually, we have succeeded in forming an InGaAs-on SiO 2 structure and an InGaAs wire structure on Si substrates by using MOVPE [56][57][58][59]. The two structures can be separately fabricated only by changing the selective growth condition of MOVPE on limited areas of (111) Si.…”

Section: Selective Growth Of Iii-v and Iii-v-oi Channels On Si Substrmentioning

confidence: 98%

“…As one of possible fabrication processes to form III-V materials on SiO 2 , we are employing the selective area growth (SAG) [54][55][56][57][58][59], where windows of SiO 2 are opened on Si substrates and III-V materials are epitaxially grown through the limited Si areas. The concept of device structures using this process is schematically shown in Fig.…”

Section: Selective Growth Of Iii-v and Iii-v-oi Channels On Si Substrmentioning

confidence: 99%

Ge/III-V Channel Engineering for Future CMOS

et al. 2009

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Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we present the basic concept on the choice of channel materials for high performance MOSFETs and address the expectation of Ge/III-V MOSFETs on the Si platform. We briefly review the present status and the critical issues of Ge/III-V MOS devices. Several key technologies, which are expected to make this heterogeneous integration of Ge/III-V MOSFETs possible, are introduced.

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“…Exploitation of GaSb/GaAs heteroepitaxy has attracted a great deal of interest in recent years [3,4]. Epitaxial lateral overgrowth (ELO) is a growth technique using partially masked substrates to reduce defect density in latticemismatched heteroepitaxial systems [4][5][6][7]. The growth of GaSb on GaAs substrates using ELO was reported by a group at Wisconsin University [4].…”

Section: Introductionmentioning

confidence: 98%

Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth

Zaima

Hashimoto

Ezaki

et al. 2008

Journal of Crystal Growth

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Formation of InGaAs-On-Insulator Structures by Epitaxial Lateral Over Growth from (111) Si

Cited by 3 publications

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Epitaxial lateral overgrowth of InGaAs on SiO₂ from (111) Si micro channel areas

Epitaxial lateral overgrowth of InGaAs on SiO₂ from (111) Si micro channel areas

Ge/III-V Channel Engineering for Future CMOS

Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth

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Formation of InGaAs-On-Insulator Structures by Epitaxial Lateral Over Growth from (111) Si

Cited by 3 publications

References 0 publications

Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas

Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas

Ge/III-V Channel Engineering for Future CMOS

Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth

Contact Info

Product

Resources

About

Epitaxial lateral overgrowth of InGaAs on SiO₂ from (111) Si micro channel areas

Epitaxial lateral overgrowth of InGaAs on SiO₂ from (111) Si micro channel areas